IPB120N10S403ATMA1
ActiveInfineon Technologies
INFINEON’S IPB120N10S4-03 N-CHANNEL MOSFET, AEC Q101 QUALIFIED, ROHS COMPLIANT, 175°C MAX TEMP. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.
Deep-Dive with AI
Search across all available documentation for this part.
IPB120N10S403ATMA1
ActiveInfineon Technologies
INFINEON’S IPB120N10S4-03 N-CHANNEL MOSFET, AEC Q101 QUALIFIED, ROHS COMPLIANT, 175°C MAX TEMP. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IPB120N10S403ATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 120 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 140 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 10120 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) [Max] | 250 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 3.5 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.5 V |
IPB120 Series
| Part | FET Type | Grade | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Qualification | Input Capacitance (Ciss) (Max) @ Vds [Max] | Package / Case | Rds On (Max) @ Id, Vgs | Technology | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Supplier Device Package | Vgs(th) (Max) @ Id [Max] | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | N-Channel | Automotive | 10 V | 20 V | 179 W | -55 °C | 175 ░C | AEC-Q101 | 6450 pF | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 4.1 mOhm | MOSFET (Metal Oxide) | 4 V | 80 V | 95 nC | 120 A | Surface Mount | |||||
Infineon Technologies | N-Channel | Automotive | 10 V | 20 V | -55 °C | 175 ░C | AEC-Q101 | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 2.5 mOhm | MOSFET (Metal Oxide) | 80 V | 167 nC | 120 A | Surface Mount | PG-TO263-3-2 | 4 V | 11550 pF | 278 W | ||||
Infineon Technologies | N-Channel | Automotive | 10 V | 20 V | 250 W | -55 °C | 175 ░C | AEC-Q101 | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 3.5 mOhm | MOSFET (Metal Oxide) | 3.5 V | 100 V | 120 A | Surface Mount | 10120 pF | 140 nC | |||||
Infineon Technologies | P-Channel | Automotive | 10 V | 20 V | -55 °C | 175 ░C | AEC-Q101 | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 3.5 mOhm | MOSFET (Metal Oxide) | 4 V | 40 V | 120 A | Surface Mount | 14790 pF | 136 W | 205 nC | |||||
Infineon Technologies | P-Channel | Automotive | 20 V | -55 °C | 175 ░C | AEC-Q101 | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 3.8 mOhm | MOSFET (Metal Oxide) | 4 V | 40 V | 120 A | Surface Mount | PG-TO263-3-2 | 14790 pF | 136 W | 205 nC | |||||
Infineon Technologies | N-Channel | Automotive | 10 V | 20 V | 250 W | -55 °C | 175 ░C | AEC-Q101 | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 2.4 mOhm | MOSFET (Metal Oxide) | 4 V | 60 V | 270 nC | 120 A | Surface Mount | PG-TO263-3-2 | 21900 pF | ||||
Infineon Technologies | N-Channel | Automotive | 4.5 V 10 V | -16 V 20 V | -55 °C | 175 ░C | AEC-Q101 | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 1.7 mOhm | MOSFET (Metal Oxide) | 2.2 V | 40 V | 120 A | Surface Mount | 14560 pF | 158 W | 190 nC |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPB120 Series
N-Channel 100 V 120A (Tc) 250W (Tc) Surface Mount PG-TO263-3
Documents
Technical documentation and resources