IR21271SPBF

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Infineon Technologies

DRIVER 600V 1-OUT HIGH SIDE/LOW SIDE INV/NON-INV 8-PIN SOIC N TUBE

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IR21271SPBF

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Infineon Technologies

DRIVER 600V 1-OUT HIGH SIDE/LOW SIDE INV/NON-INV 8-PIN SOIC N TUBE

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Technical Specifications

Parameters and characteristics for this part

Specification	IR21271SPBF

Channel Type	Single
Current - Peak Output (Source, Sink) [custom]	500 mA
Current - Peak Output (Source, Sink) [custom]	250 mA
Driven Configuration	High-Side, Low-Side
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	0.8 V, 3 V
Mounting Type	Surface Mount
Number of Drivers	1
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rise / Fall Time (Typ) [custom]	80 ns
Rise / Fall Time (Typ) [custom]	40 ns
Supplier Device Package	8-SOIC
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	9 V

IR21271 Series

Part	Input Type	Driven Configuration	Gate Type	Operating Temperature [Max]	Operating Temperature [Min]	Number of Drivers	Voltage - Supply [Min]	Voltage - Supply [Max]	Package / Case	Package / Case	Package / Case	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Logic Voltage - VIL, VIH	Supplier Device Package	Channel Type	Mounting Type	High Side Voltage - Max (Bootstrap) [Max]	Package / Case [y]	Package / Case [x]
Infineon Technologies IR21271PBF	Non-Inverting	High-Side Low-Side	IGBT N-Channel MOSFET	150 °C	-40 °C	1	9 V	20 V	0.3 in	8-DIP	7.62 mm	500 mA	250 mA	80 ns	40 ns	0.8 V 3 V	8-PDIP	Single	Through Hole	600 V
Infineon Technologies IR21271S	Non-Inverting	High-Side Low-Side	IGBT N-Channel MOSFET	150 °C	-40 °C	1	9 V	20 V		8-SOIC		500 mA	250 mA	80 ns	40 ns	0.8 V 3 V	8-SOIC	Single	Surface Mount	600 V	3.9 mm	0.154 in
Infineon Technologies IR21271STR	Non-Inverting	High-Side Low-Side	IGBT N-Channel MOSFET	150 °C	-40 °C	1	9 V	20 V		8-SOIC		500 mA	250 mA	80 ns	40 ns	0.8 V 3 V	8-SOIC	Single	Surface Mount	600 V	3.9 mm	0.154 in
Infineon Technologies IR21271PBF	Non-Inverting	High-Side Low-Side	IGBT N-Channel MOSFET	150 °C	-40 °C	1	9 V	20 V	0.3 in	8-DIP	7.62 mm	500 mA	250 mA	80 ns	40 ns	0.8 V 3 V	8-PDIP	Single	Through Hole	600 V
Infineon Technologies IR21271STRPBF	Non-Inverting	High-Side Low-Side	IGBT N-Channel MOSFET	150 °C	-40 °C	1	9 V	20 V		8-SOIC		500 mA	250 mA	80 ns	40 ns	0.8 V 3 V	8-SOIC	Single	Surface Mount	600 V	3.9 mm	0.154 in
Infineon Technologies IR21271SPBF	Non-Inverting	High-Side Low-Side	IGBT N-Channel MOSFET	150 °C	-40 °C	1	9 V	20 V		8-SOIC		500 mA	250 mA	80 ns	40 ns	0.8 V 3 V	8-SOIC	Single	Surface Mount	600 V	3.9 mm	0.154 in
Infineon Technologies IR21271	Non-Inverting	High-Side Low-Side	IGBT N-Channel MOSFET	150 °C	-40 °C	1	9 V	20 V	0.3 in	8-DIP	7.62 mm	500 mA	250 mA	80 ns	40 ns	0.8 V 3 V	8-PDIP	Single	Through Hole	600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 1.02
Digikey	Tube	1	$ 2.76
		10	$ 2.48
		95	$ 2.00
		285	$ 1.87
		570	$ 1.64
		1045	$ 1.36
		2565	$ 1.26
		5035	$ 1.22

Description

General part information

IR21271 Series

High-Side or Low-Side Gate Driver IC Non-Inverting 8-SOIC

Documents

Technical documentation and resources