IR21271 Series

Catalog

EICEDRIVER™ 600 V HIGH-SIDE DRIVER IC WITH TYPICAL 0.25 A SOURCE AND 0.5 A SINK OUTPUT CURRENTS. IT COMES WITH A FUNCTIONAL LEVELSHIFT PDIP8 PACKAGE AND WORKS WITH IGBTS AND MOSFETS. FEATURES: CURRENT SENSE, FAULT REPORTING, OVER-CURRENT PROTECTION (ITRIP), SINGLE INPUT

Part	Input Type	Driven Configuration	Gate Type	Operating Temperature [Max]	Operating Temperature [Min]	Number of Drivers	Voltage - Supply [Min]	Voltage - Supply [Max]	Package / Case	Package / Case	Package / Case	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Logic Voltage - VIL, VIH	Supplier Device Package	Channel Type	Mounting Type	High Side Voltage - Max (Bootstrap) [Max]	Package / Case [y]	Package / Case [x]
Infineon Technologies IR21271PBF	Non-Inverting	High-Side Low-Side	IGBT N-Channel MOSFET	150 °C	-40 °C	1	9 V	20 V	0.3 in	8-DIP	7.62 mm	500 mA	250 mA	80 ns	40 ns	0.8 V 3 V	8-PDIP	Single	Through Hole	600 V
Infineon Technologies IR21271S	Non-Inverting	High-Side Low-Side	IGBT N-Channel MOSFET	150 °C	-40 °C	1	9 V	20 V		8-SOIC		500 mA	250 mA	80 ns	40 ns	0.8 V 3 V	8-SOIC	Single	Surface Mount	600 V	3.9 mm	0.154 in
Infineon Technologies IR21271STR	Non-Inverting	High-Side Low-Side	IGBT N-Channel MOSFET	150 °C	-40 °C	1	9 V	20 V		8-SOIC		500 mA	250 mA	80 ns	40 ns	0.8 V 3 V	8-SOIC	Single	Surface Mount	600 V	3.9 mm	0.154 in
Infineon Technologies IR21271PBF	Non-Inverting	High-Side Low-Side	IGBT N-Channel MOSFET	150 °C	-40 °C	1	9 V	20 V	0.3 in	8-DIP	7.62 mm	500 mA	250 mA	80 ns	40 ns	0.8 V 3 V	8-PDIP	Single	Through Hole	600 V
Infineon Technologies IR21271STRPBF	Non-Inverting	High-Side Low-Side	IGBT N-Channel MOSFET	150 °C	-40 °C	1	9 V	20 V		8-SOIC		500 mA	250 mA	80 ns	40 ns	0.8 V 3 V	8-SOIC	Single	Surface Mount	600 V	3.9 mm	0.154 in
Infineon Technologies IR21271SPBF	Non-Inverting	High-Side Low-Side	IGBT N-Channel MOSFET	150 °C	-40 °C	1	9 V	20 V		8-SOIC		500 mA	250 mA	80 ns	40 ns	0.8 V 3 V	8-SOIC	Single	Surface Mount	600 V	3.9 mm	0.154 in
Infineon Technologies IR21271	Non-Inverting	High-Side Low-Side	IGBT N-Channel MOSFET	150 °C	-40 °C	1	9 V	20 V	0.3 in	8-DIP	7.62 mm	500 mA	250 mA	80 ns	40 ns	0.8 V 3 V	8-PDIP	Single	Through Hole	600 V