IR21271PBF

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Infineon Technologies

EICEDRIVER™ 600 V HIGH-SIDE DRIVER IC WITH TYPICAL 0.25 A SOURCE AND 0.5 A SINK OUTPUT CURRENTS. IT COMES WITH A FUNCTIONAL LEVELSHIFT PDIP8 PACKAGE AND WORKS WITH IGBTS AND MOSFETS. FEATURES: CURRENT SENSE, FAULT REPORTING, OVER-CURRENT PROTECTION (ITRIP), SINGLE INPUT

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IR21271PBF

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Infineon Technologies

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IR21271PBF

Channel Type	Single
Current - Peak Output (Source, Sink) [custom]	500 mA
Current - Peak Output (Source, Sink) [custom]	250 mA
Driven Configuration	High-Side, Low-Side
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	0.8 V, 3 V
Mounting Type	Through Hole
Number of Drivers	1
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	0.3 in
Package / Case	8-DIP
Package / Case	7.62 mm
Rise / Fall Time (Typ) [custom]	80 ns
Rise / Fall Time (Typ) [custom]	40 ns
Supplier Device Package	8-PDIP
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	9 V

IR21271 Series

Part	Input Type	Driven Configuration	Gate Type	Operating Temperature [Max]	Operating Temperature [Min]	Number of Drivers	Voltage - Supply [Min]	Voltage - Supply [Max]	Package / Case	Package / Case	Package / Case	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Logic Voltage - VIL, VIH	Supplier Device Package	Channel Type	Mounting Type	High Side Voltage - Max (Bootstrap) [Max]	Package / Case [y]	Package / Case [x]
Infineon Technologies IR21271PBF	Non-Inverting	High-Side Low-Side	IGBT N-Channel MOSFET	150 °C	-40 °C	1	9 V	20 V	0.3 in	8-DIP	7.62 mm	500 mA	250 mA	80 ns	40 ns	0.8 V 3 V	8-PDIP	Single	Through Hole	600 V
Infineon Technologies IR21271S	Non-Inverting	High-Side Low-Side	IGBT N-Channel MOSFET	150 °C	-40 °C	1	9 V	20 V		8-SOIC		500 mA	250 mA	80 ns	40 ns	0.8 V 3 V	8-SOIC	Single	Surface Mount	600 V	3.9 mm	0.154 in
Infineon Technologies IR21271STR	Non-Inverting	High-Side Low-Side	IGBT N-Channel MOSFET	150 °C	-40 °C	1	9 V	20 V		8-SOIC		500 mA	250 mA	80 ns	40 ns	0.8 V 3 V	8-SOIC	Single	Surface Mount	600 V	3.9 mm	0.154 in
Infineon Technologies IR21271PBF	Non-Inverting	High-Side Low-Side	IGBT N-Channel MOSFET	150 °C	-40 °C	1	9 V	20 V	0.3 in	8-DIP	7.62 mm	500 mA	250 mA	80 ns	40 ns	0.8 V 3 V	8-PDIP	Single	Through Hole	600 V
Infineon Technologies IR21271STRPBF	Non-Inverting	High-Side Low-Side	IGBT N-Channel MOSFET	150 °C	-40 °C	1	9 V	20 V		8-SOIC		500 mA	250 mA	80 ns	40 ns	0.8 V 3 V	8-SOIC	Single	Surface Mount	600 V	3.9 mm	0.154 in
Infineon Technologies IR21271SPBF	Non-Inverting	High-Side Low-Side	IGBT N-Channel MOSFET	150 °C	-40 °C	1	9 V	20 V		8-SOIC		500 mA	250 mA	80 ns	40 ns	0.8 V 3 V	8-SOIC	Single	Surface Mount	600 V	3.9 mm	0.154 in
Infineon Technologies IR21271	Non-Inverting	High-Side Low-Side	IGBT N-Channel MOSFET	150 °C	-40 °C	1	9 V	20 V	0.3 in	8-DIP	7.62 mm	500 mA	250 mA	80 ns	40 ns	0.8 V 3 V	8-PDIP	Single	Through Hole	600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	146	$ 2.06
		146	$ 2.06
	Tube	1	$ 2.69
		1	$ 2.69
		10	$ 2.41
		10	$ 2.41
		25	$ 2.28
		25	$ 2.28
		100	$ 1.98
		100	$ 1.98
		250	$ 1.87
		250	$ 1.87
		500	$ 1.78
		500	$ 1.78

Description

General part information

IR21271 Series

600 V High Side Driver IC with typical 0.25 A source and 0.5 A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 8 Lead SOIC.

Documents

Technical documentation and resources