TSM120N06LCR RLG

Taiwan Semiconductor Corporation

MOSFET N-CH 60V 54A 8PDFN

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Taiwan Semiconductor Corporation

MOSFET N-CH 60V 54A 8PDFN

Technical Specifications

Parameters and characteristics for this part

Specification	TSM120N06LCR RLG

Current - Continuous Drain (Id) @ 25°C	54 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	36.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2116 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Rds On (Max) @ Id, Vgs	12 mOhm
Supplier Device Package	8-PDFN (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Technology	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs(th) (Max) @ Id	Supplier Device Package	Power Dissipation (Max) [Max]	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]
Taiwan Semiconductor Corporation TSM120NA03CR RLG	Surface Mount	562 pF	30 V	39 A	20 V	8-PowerTDFN	9.2 nC	MOSFET (Metal Oxide)	11.7 mOhm	-55 °C	150 °C	4.5 V 10 V	N-Channel	2.5 V	8-PDFN (5x6)	33 W
Taiwan Semiconductor Corporation TSM120N06LCP ROG	Surface Mount	2118 pF	60 V	70 A	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3		MOSFET (Metal Oxide)		-55 °C	150 °C	4.5 V 10 V	N-Channel	2.5 V	TO-252 (DPAK)		125 W	12 mOhm
Taiwan Semiconductor Corporation TSM120N06LCR RLG	Surface Mount		60 V	54 A	20 V	8-PowerTDFN	36.5 nC	MOSFET (Metal Oxide)		-55 °C	150 °C	4.5 V 10 V	N-Channel	2.5 V	8-PDFN (5x6)			12 mOhm	2116 pF

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General part information

N-Channel 60 V 54A (Tc) 69W (Tc) Surface Mount 8-PDFN (5x6)

Technical documentation and resources