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TSM120NA03CR RLG - MFG_8-PDFN(5X6)

TSM120NA03CR RLG

Obsolete
Taiwan Semiconductor Corporation

MOSFET N-CH 30V 39A 8PDFN

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TSM120NA03CR RLG - MFG_8-PDFN(5X6)

TSM120NA03CR RLG

Obsolete
Taiwan Semiconductor Corporation

MOSFET N-CH 30V 39A 8PDFN

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationTSM120NA03CR RLG
Current - Continuous Drain (Id) @ 25°C39 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs9.2 nC
Input Capacitance (Ciss) (Max) @ Vds562 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max) [Max]33 W
Rds On (Max) @ Id, Vgs [Max]11.7 mOhm
Supplier Device Package8-PDFN (5x6)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

TSM120 Series

N-Channel 30 V 39A (Tc) 33W (Tc) Surface Mount 8-PDFN (5x6)

Documents

Technical documentation and resources

No documents available