MOSFET N-CH 30V 39A 8PDFN
| Part | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Technology | Rds On (Max) @ Id, Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Vgs(th) (Max) @ Id | Supplier Device Package | Power Dissipation (Max) [Max] | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | Surface Mount | 562 pF | 30 V | 39 A | 20 V | 8-PowerTDFN | 9.2 nC | MOSFET (Metal Oxide) | 11.7 mOhm | -55 °C | 150 °C | 4.5 V 10 V | N-Channel | 2.5 V | 8-PDFN (5x6) | 33 W | |||
Taiwan Semiconductor Corporation | Surface Mount | 2118 pF | 60 V | 70 A | 20 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | MOSFET (Metal Oxide) | -55 °C | 150 °C | 4.5 V 10 V | N-Channel | 2.5 V | TO-252 (DPAK) | 125 W | 12 mOhm | ||||
Taiwan Semiconductor Corporation | Surface Mount | 60 V | 54 A | 20 V | 8-PowerTDFN | 36.5 nC | MOSFET (Metal Oxide) | -55 °C | 150 °C | 4.5 V 10 V | N-Channel | 2.5 V | 8-PDFN (5x6) | 12 mOhm | 2116 pF |