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STD9N60M2 - MFG_DPAK(TO252-3)

STD9N60M2

Active
STMicroelectronics

N-CHANNEL 600 V, 0.72 OHM TYP., 5.5 A MDMESH M2 POWER MOSFET IN DPAK PACKAGE

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STD9N60M2 - MFG_DPAK(TO252-3)

STD9N60M2

Active
STMicroelectronics

N-CHANNEL 600 V, 0.72 OHM TYP., 5.5 A MDMESH M2 POWER MOSFET IN DPAK PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTD9N60M2
Current - Continuous Drain (Id) @ 25°C5.5 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]10 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]320 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)60 W
Rds On (Max) @ Id, Vgs780 mOhm
Supplier Device PackageDPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.39
10$ 0.97
100$ 0.75
500$ 0.59
1000$ 0.54
Digi-Reel® 1$ 1.39
10$ 0.97
100$ 0.75
500$ 0.59
1000$ 0.54
Tape & Reel (TR) 2500$ 0.50
5000$ 0.47
12500$ 0.45
NewarkEach (Supplied on Cut Tape) 1$ 1.61
10$ 1.20
25$ 1.13
50$ 1.06
100$ 0.99
250$ 0.92
500$ 0.84
1000$ 0.76

Description

General part information

STD9NM60N Series

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.