STD9NM60N Series

N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in DPAK package

Catalog

N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in DPAK package

Part	Supplier Device Package	Vgs(th) (Max) @ Id	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Mounting Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Operating Temperature	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
STMicroelectronics STD9N60M2	DPAK	4 V	MOSFET (Metal Oxide)	320 pF	N-Channel	Surface Mount	600 V	10 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	150 °C	25 V	10 V	780 mOhm	5.5 A	60 W
STMicroelectronics STD9NM60N	DPAK	4 V	MOSFET (Metal Oxide)		N-Channel	Surface Mount	600 V		DPAK (2 Leads + Tab) SC-63 TO-252-3	150 °C	25 V	10 V	745 mOhm	6.5 A	70 W	17.4 nC	452 pF

Catalog

N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in DPAK package

Description

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.