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STD9NM60N - MFG_DPAK(TO252-3)

STD9NM60N

Active
STMicroelectronics

MOSFET TRANSISTOR, N CHANNEL, 6.5 A, 600 V, 0.63 OHM, 10 V, 3 V ROHS COMPLIANT: YES

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DocumentsDatasheet+19
STD9NM60N - MFG_DPAK(TO252-3)

STD9NM60N

Active
STMicroelectronics

MOSFET TRANSISTOR, N CHANNEL, 6.5 A, 600 V, 0.63 OHM, 10 V, 3 V ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsDatasheet+19

Technical Specifications

Parameters and characteristics for this part

SpecificationSTD9NM60N
Current - Continuous Drain (Id) @ 25°C6.5 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs17.4 nC
Input Capacitance (Ciss) (Max) @ Vds452 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)70 W
Rds On (Max) @ Id, Vgs745 mOhm
Supplier Device PackageDPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.38
10$ 1.98
100$ 1.57
500$ 1.33
1000$ 1.13
Digi-Reel® 1$ 2.38
10$ 1.98
100$ 1.57
500$ 1.33
1000$ 1.13
Tape & Reel (TR) 2500$ 1.07
5000$ 1.03
NewarkEach 1$ 2.06
10$ 1.56
100$ 1.28
500$ 1.20
1000$ 1.08
2500$ 0.90
10000$ 0.85

Description

General part information

STD9NM60N Series

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.