SPW24N60CFDFKSA1

Infineon Technologies

MOSFET N-CH 650V 21.7A TO247-3

Deep-Dive with AI

Search across all available documentation for this part.

SPW24N60CFDFKSA1

Infineon Technologies

MOSFET N-CH 650V 21.7A TO247-3

Deep-Dive with AI

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SPW24N60CFDFKSA1

Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	143 nC
Input Capacitance (Ciss) (Max) @ Vds	3160 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	240 W
Rds On (Max) @ Id, Vgs [Max]	185 mOhm
Supplier Device Package	PG-TO247-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

SPW24N60 Series

Part	Rds On (Max) @ Id, Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	FET Type	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C
Infineon Technologies SPW24N60CFDFKSA1	185 mOhm	10 V	MOSFET (Metal Oxide)	-55 °C	150 °C	3160 pF	20 V	240 W	5 V	PG-TO247-3-1	143 nC	N-Channel	TO-247-3	650 V	Through Hole
Infineon Technologies SPW24N60C3FKSA1		10 V	MOSFET (Metal Oxide)	-55 °C	150 °C		20 V	240 W		PG-TO247-3-1		N-Channel	TO-247-3	650 V	Through Hole	135 nC	160 mOhm	24.3 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	240	$ 2.85

Description

General part information

SPW24N60 Series

CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS™ CFD series combines the experience of the leading SJ MOSFET supplier with high class innovation. Replacement for CoolMOS™ CFD is600V CoolMOS™ CFD7Characteristics and applications of CoolMOS™ CFD2Improved cost performance, light load efficiency and ease-of-use in EMI and low voltage overshoot. Soft switching resonant topologies with hard commutation requirements requiring a fast body diode.

Documents

Technical documentation and resources

No documents available