SPW24N60C3FKSA1

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Infineon Technologies

MOSFET TRANSISTOR, N CHANNEL, 24.3 A, 650 V, 0.14 OHM, 10 V, 3 V ROHS COMPLIANT: YES

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Infineon Technologies

MOSFET TRANSISTOR, N CHANNEL, 24.3 A, 650 V, 0.14 OHM, 10 V, 3 V ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	SPW24N60C3FKSA1

Current - Continuous Drain (Id) @ 25°C	24.3 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	135 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	240 W
Rds On (Max) @ Id, Vgs	160 mOhm
Supplier Device Package	PG-TO247-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Rds On (Max) @ Id, Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	FET Type	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C
Infineon Technologies SPW24N60CFDFKSA1	185 mOhm	10 V	MOSFET (Metal Oxide)	-55 °C	150 °C	3160 pF	20 V	240 W	5 V	PG-TO247-3-1	143 nC	N-Channel	TO-247-3	650 V	Through Hole
Infineon Technologies SPW24N60C3FKSA1		10 V	MOSFET (Metal Oxide)	-55 °C	150 °C		20 V	240 W		PG-TO247-3-1		N-Channel	TO-247-3	650 V	Through Hole	135 nC	160 mOhm	24.3 A

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General part information

N-Channel 650 V 24.3A (Tc) 240W (Tc) Through Hole PG-TO247-3-1

Technical documentation and resources