MOSFET N-CH 650V 21.7A TO247-3
| Part | Rds On (Max) @ Id, Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | FET Type | Package / Case | Drain to Source Voltage (Vdss) | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 185 mOhm | 10 V | MOSFET (Metal Oxide) | -55 °C | 150 °C | 3160 pF | 20 V | 240 W | 5 V | PG-TO247-3-1 | 143 nC | N-Channel | TO-247-3 | 650 V | Through Hole | |||
Infineon Technologies | 10 V | MOSFET (Metal Oxide) | -55 °C | 150 °C | 20 V | 240 W | PG-TO247-3-1 | N-Channel | TO-247-3 | 650 V | Through Hole | 135 nC | 160 mOhm | 24.3 A |