STGWA50HP65FB2

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STMicroelectronics

TRENCH GATE FIELD-STOP, 650 V, 50 A, HIGH-SPEED HB2 SERIES IGBT IN A TO-247 LONG LEADS PACKAGE

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STGWA50HP65FB2

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STMicroelectronics

TRENCH GATE FIELD-STOP, 650 V, 50 A, HIGH-SPEED HB2 SERIES IGBT IN A TO-247 LONG LEADS PACKAGE

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Description Specifications Series Pricing CAD Documents

Description

General part information

STGWA50 Series

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A diode used for protection purposes only is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.

Technical Specifications

Parameters and characteristics for this part

Specification	STGWA50HP65FB2

Current - Collector (Ic) (Max)	86 A
Current - Collector Pulsed (Icm)	150 A
Gate Charge	151 nC
IGBT Type	Trench Field Stop
Input Type	Standard
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-3
Package Name	TO-247 Long Leads
Power - Max	272 W
Reverse Recovery Time (trr)	140 ns
Switching Energy	580 µJ
Switching Energy (Off)	580 µJ
Td (off) @ 25°C	115 ns
Test Condition Current	50 A
Test Condition Resistance	4.7 Ohm
Test Condition Voltage	400 V
Test Condition Voltage (Secondary)	15 V
Vce(on) (Max)	2 V
Voltage - Collector Emitter Breakdown (Max)	650 V

STGWA50 Series

Trench gate field-stop IGBT, 650 V, 50 A soft switching IH series in a TO-247 long leads package

Part	Current - Collector (Ic) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Switching Energy (On)	Switching Energy (Off)	Voltage - Collector Emitter Breakdown (Max)	Input Type	Current - Collector Pulsed (Icm)	Test Condition Voltage	Test Condition Voltage (Secondary)	Test Condition Current	Test Condition Resistance	IGBT Type	Package Name	Reverse Recovery Time (trr)	Td (on) @ 25°C	Td (off) @ 25°C	Gate Charge	Package / Case	Power - Max	Vce(on) (Max)	Switching Energy
STMicroelectronics STGWA50M65DF2	80 A	-55 °C	175 °C	Through Hole	880 µJ	1.57 mJ	650 V	Standard	150 A	400 V	15 V	50 A	6.8 Ohm	Trench Field Stop	TO-247 Long Leads	162 ns	42 ns	130 ns	150 nC	TO-247-3	375 W	2.1 V
STMicroelectronics STGWA50IH65DF	100 A	-55 °C	175 °C	Through Hole		284 µJ	650 V	Standard	150 A	400 V	15 V	50 A	22 Ohm	Trench Field Stop	TO-247 Long Leads			260 ns	158 nC	TO-247-3	300 W	2 V	284 µJ
STMicroelectronics STGWA50HP65FB2	86 A	-55 °C	175 °C	Through Hole		580 µJ	650 V	Standard	150 A	400 V	15 V	50 A	4.7 Ohm	Trench Field Stop	TO-247 Long Leads	140 ns		115 ns	151 nC	TO-247-3	272 W	2 V	580 µJ
STMicroelectronics STGWA50H65DFB2	86 A	-55 °C	175 °C	Through Hole	910 µJ	580 µJ	650 V	Standard	150 A	400 V	15 V	50 A	4.7 Ohm	Trench Field Stop	TO-247 Long Leads	92 ns	28 ns	115 ns	151 nC	TO-247-3	272 W	2 V