Zenode.ai Logo
Beta
⌘K
Log InSign Up
STGWA50HP65FB2 - TO-247-3

STGWA50HP65FB2

Active
STMicroelectronics

TRENCH GATE FIELD-STOP, 650 V, 50 A, HIGH-SPEED HB2 SERIES IGBT IN A TO-247 LONG LEADS PACKAGE

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsAN4694TN1378+15
STGWA50HP65FB2 - TO-247-3

STGWA50HP65FB2

Active
STMicroelectronics

TRENCH GATE FIELD-STOP, 650 V, 50 A, HIGH-SPEED HB2 SERIES IGBT IN A TO-247 LONG LEADS PACKAGE

Deep-Dive with AI

DocumentsAN4694TN1378+15

Technical Specifications

Parameters and characteristics for this part

SpecificationSTGWA50HP65FB2
Current - Collector (Ic) (Max) [Max]86 A
Current - Collector Pulsed (Icm)150 A
Gate Charge151 nC
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power - Max [Max]272 W
Reverse Recovery Time (trr)140 ns
Supplier Device PackageTO-247 Long Leads
Switching Energy580 µJ
Td (on/off) @ 25°C [Max]115 ns
Td (on/off) @ 25°C [Min]-
Test Condition4.7 Ohm, 50 A, 400 V, 15 V
Vce(on) (Max) @ Vge, Ic2 V
Voltage - Collector Emitter Breakdown (Max)650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 2.74
30$ 2.17
120$ 1.86
510$ 1.65
1020$ 1.42
2010$ 1.33
5010$ 1.28
NewarkEach 1$ 4.58
10$ 4.57
25$ 2.84
60$ 2.65
120$ 2.46
270$ 2.18

Description

General part information

STGWA50HP65FB2 Series

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A diode used for protection purposes only is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.