STGWA50HP65FB2 Series

Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO-247 long leads package

Catalog

Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO-247 long leads package

Part	Td (on/off) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Test Condition	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	IGBT Type	Reverse Recovery Time (trr)	Voltage - Collector Emitter Breakdown (Max)	Package / Case	Power - Max [Max]	Switching Energy	Supplier Device Package	Mounting Type	Current - Collector (Ic) (Max) [Max]	Gate Charge	Td (on/off) @ 25°C [Min]	Td (on/off) @ 25°C [Max]
STMicroelectronics STGWA50M65DF2	42 ns 130 ns	-55 °C	175 ░C	6.8 Ohm 15 V 50 A 400 V	150 A	2.1 V	Trench Field Stop	162 ns	650 V	TO-247-3	375 W	1.57 mJ 880 µJ	TO-247 Long Leads	Through Hole	80 A	150 nC
STMicroelectronics STGWA50HP65FB2		-55 °C	175 ░C	4.7 Ohm 15 V 50 A 400 V	150 A	2 V	Trench Field Stop	140 ns	650 V	TO-247-3	272 W	580 µJ	TO-247 Long Leads	Through Hole	86 A	151 nC	-	115 ns
STMicroelectronics STGWA50H65DFB2	28 ns 115 ns	-55 °C	175 ░C	4.7 Ohm 15 V 50 A 400 V	150 A	2 V	Trench Field Stop	92 ns	650 V	TO-247-3	272 W	580 µJ 910 µJ	TO-247 Long Leads	Through Hole	86 A	151 nC

Catalog

Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO-247 long leads package

Description

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A diode used for protection purposes only is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.