Technical Specifications
Parameters and characteristics for this part
| Specification | STGWA50M65DF2 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 80 A |
| Current - Collector Pulsed (Icm) | 150 A |
| Gate Charge | 150 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 375 W |
| Reverse Recovery Time (trr) | 162 ns |
| Supplier Device Package | TO-247 Long Leads |
| Switching Energy | 1.57 mJ, 880 µJ |
| Td (on/off) @ 25°C | 42 ns, 130 ns |
| Test Condition | 400 V, 50 A, 6.8 Ohm, 15 V |
| Vce(on) (Max) @ Vge, Ic | 2.1 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 4.79 | |
| 30 | $ 3.80 | |||
| 120 | $ 3.26 | |||
| 510 | $ 2.89 | |||
| 1020 | $ 2.48 | |||
| 2010 | $ 2.33 | |||
Description
General part information
STGWA50HP65FB2 Series
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A diode used for protection purposes only is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.