Specification	CSD19506KTT

Current - Continuous Drain (Id) (Ta)	200 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On)	6 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	156 nC, 156 nC
Input Capacitance (Ciss) (Max)	12200 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB, D2PAK (3 Leads + Tab), TO-263AA, TO-263-4
Package Name	TO-263 (DDPAK-3)
Power Dissipation (Max)	375 W
Rds On (Max)	2.3 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.2 V

CSD19506 Series

80-V, N channel NexFET™ power MOSFET, single TO-220, 2.3 mOhm

Part	Current - Continuous Drain (Id) (Ta)	Vgs(th) (Max)	Package / Case	Input Capacitance (Ciss) (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Power Dissipation (Max)	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Technology	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Rds On (Max)	FET Type	Vgs (Max)
Texas Instruments CSD19506KTTT	200 A	3.2 V	D2PAK (2 Leads + Tab) D2PAK (3 Leads + Tab) TO-263-3 TO-263-4 TO-263AA TO-263AB	12200 pF	6 V	10 V	375 W	Surface Mount	-55 °C	175 °C	TO-263 (DDPAK-3)	MOSFET (Metal Oxide)	156 nC 156 nC	80 V	2.3 mOhm	N-Channel	20 V
Texas Instruments CSD19506KCS	100 A	3.2 V	TO-220-3	12200 pF	6 V	10 V	375 W	Through Hole	-55 °C	175 °C	TO-220-3	MOSFET (Metal Oxide)	156 nC 156 nC	80 V	2.3 mOhm	N-Channel	20 V
Texas Instruments CSD19506KTT	200 A	3.2 V	D2PAK (2 Leads + Tab) D2PAK (3 Leads + Tab) TO-263-3 TO-263-4 TO-263AA TO-263AB	12200 pF	6 V	10 V	375 W	Surface Mount	-55 °C	175 °C	TO-263 (DDPAK-3)	MOSFET (Metal Oxide)	156 nC 156 nC	80 V	2.3 mOhm	N-Channel	20 V

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