CSD19506 Series

80-V, N channel NexFET™ power MOSFET, single TO-220, 2.3 mOhm

Catalog

80-V, N channel NexFET™ power MOSFET, single TO-220, 2.3 mOhm

Part	Current - Continuous Drain (Id) (Ta)	Vgs(th) (Max)	Package / Case	Input Capacitance (Ciss) (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Power Dissipation (Max)	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Technology	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Rds On (Max)	FET Type	Vgs (Max)
Texas Instruments CSD19506KTTT	200 A	3.2 V	D2PAK (2 Leads + Tab) D2PAK (3 Leads + Tab) TO-263-3 TO-263-4 TO-263AA TO-263AB	12200 pF	6 V	10 V	375 W	Surface Mount	-55 °C	175 °C	TO-263 (DDPAK-3)	MOSFET (Metal Oxide)	156 nC 156 nC	80 V	2.3 mOhm	N-Channel	20 V
Texas Instruments CSD19506KCS	100 A	3.2 V	TO-220-3	12200 pF	6 V	10 V	375 W	Through Hole	-55 °C	175 °C	TO-220-3	MOSFET (Metal Oxide)	156 nC 156 nC	80 V	2.3 mOhm	N-Channel	20 V
Texas Instruments CSD19506KTT	200 A	3.2 V	D2PAK (2 Leads + Tab) D2PAK (3 Leads + Tab) TO-263-3 TO-263-4 TO-263AA TO-263AB	12200 pF	6 V	10 V	375 W	Surface Mount	-55 °C	175 °C	TO-263 (DDPAK-3)	MOSFET (Metal Oxide)	156 nC 156 nC	80 V	2.3 mOhm	N-Channel	20 V

Catalog

80-V, N channel NexFET™ power MOSFET, single TO-220, 2.3 mOhm

Description

This 80-V, 2.0-mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications. This 80-V, 2.0-mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.