Specification	CSD18510KCS

Current - Continuous Drain (Id) (Ta)	200 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	75 nC
Input Capacitance (Ciss) (Max)	11400 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	TO-220-3
Power Dissipation (Max)	250 W
Rds On (Max)	1.7 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.3 V

CSD18510 Series

40-V, N channel NexFET™ power MOSFET, single TO-220, 1.7 mOhm

Part	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Drain to Source Voltage (Vdss)	Technology	Package / Case	Rds On (Max)	Vgs (Max)	Gate Charge (Max)	Mounting Type	FET Type	Package Name	Current - Continuous Drain (Id) (Tc)	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Vgs(th) (Max)	Package Width	Package Length	Current - Continuous Drain (Id) (Ta)
Texas Instruments CSD18510KTT	10 V	4.5 V	40 V	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1.7 mOhm	20 V	153 nC	Surface Mount	N-Channel	TO-263 (DDPAK-3)	274 A	-55 °C	175 °C	11400 pF	250 W	2.3 V
Texas Instruments CSD18510Q5BT	10 V	4.5 V	40 V	MOSFET (Metal Oxide)	8-PowerTDFN	0.96 mOhm	20 V	153 nC	Surface Mount	N-Channel	8-VSON-CLIP	300 A	-55 °C	150 °C	11400 pF	156 W	2.3 V	6 mm	5 mm
Texas Instruments CSD18510KCS	10 V	4.5 V	40 V	MOSFET (Metal Oxide)	TO-220-3	1.7 mOhm	20 V	75 nC	Through Hole	N-Channel	TO-220-3		-55 °C	175 °C	11400 pF	250 W	2.3 V			200 A
Texas Instruments CSD18510KTTT	10 V	4.5 V	40 V	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) D2PAK (3 Leads + Tab) TO-263-3 TO-263-4 TO-263AA TO-263AB	2.6 mOhm	20 V	132 nC	Surface Mount	N-Channel	TO-263 (DDPAK-3)	274 A	-55 °C	175 °C	11400 pF	250 W	2.3 V

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