40-V, N channel NexFET™ power MOSFET, single TO-220, 1.7 mOhm
40-V, N channel NexFET™ power MOSFET, single TO-220, 1.7 mOhm
40-V, N channel NexFET™ power MOSFET, single TO-220, 1.7 mOhm
| Part | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Drain to Source Voltage (Vdss) | Technology | Package / Case | Rds On (Max) | Vgs (Max) | Gate Charge (Max) | Mounting Type | FET Type | Package Name | Current - Continuous Drain (Id) (Tc) | Operating Temperature (Min) | Operating Temperature (Max) | Input Capacitance (Ciss) (Max) | Power Dissipation (Max) | Vgs(th) (Max) | Package Width | Package Length | Current - Continuous Drain (Id) (Ta) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Texas Instruments | 10 V | 4.5 V | 40 V | MOSFET (Metal Oxide) | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 1.7 mOhm | 20 V | 153 nC | Surface Mount | N-Channel | TO-263 (DDPAK-3) | 274 A | -55 °C | 175 °C | 11400 pF | 250 W | 2.3 V | |||
 Texas Instruments | 10 V | 4.5 V | 40 V | MOSFET (Metal Oxide) | 8-PowerTDFN | 0.96 mOhm | 20 V | 153 nC | Surface Mount | N-Channel | 8-VSON-CLIP | 300 A | -55 °C | 150 °C | 11400 pF | 156 W | 2.3 V | 6 mm | 5 mm | |
 Texas Instruments | 10 V | 4.5 V | 40 V | MOSFET (Metal Oxide) | TO-220-3 | 1.7 mOhm | 20 V | 75 nC | Through Hole | N-Channel | TO-220-3 | -55 °C | 175 °C | 11400 pF | 250 W | 2.3 V | 200 A | |||
Texas Instruments | 10 V | 4.5 V | 40 V | MOSFET (Metal Oxide) | D2PAK (2 Leads + Tab) D2PAK (3 Leads + Tab) TO-263-3 TO-263-4 TO-263AA TO-263AB | 2.6 mOhm | 20 V | 132 nC | Surface Mount | N-Channel | TO-263 (DDPAK-3) | 274 A | -55 °C | 175 °C | 11400 pF | 250 W | 2.3 V |