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IPB027N10N3GATMA1 - Infineon Technologies AG-BUZ30AH3045AATMA1 MOSFETs Trans MOSFET N-CH 200V 21A 3-Pin(2+Tab) D2PAK T/R

IPB027N10N3GATMA1

Active
Infineon Technologies

POWER MOSFET, N CHANNEL, 100 V, 120 A, 0.0023 OHM, TO-263 (D2PAK), SURFACE MOUNT

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IPB027N10N3GATMA1 - Infineon Technologies AG-BUZ30AH3045AATMA1 MOSFETs Trans MOSFET N-CH 200V 21A 3-Pin(2+Tab) D2PAK T/R

IPB027N10N3GATMA1

Active
Infineon Technologies

POWER MOSFET, N CHANNEL, 100 V, 120 A, 0.0023 OHM, TO-263 (D2PAK), SURFACE MOUNT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIPB027N10N3GATMA1
Current - Continuous Drain (Id) @ 25°C120 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs206 nC
Input Capacitance (Ciss) (Max) @ Vds14800 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]300 W
Rds On (Max) @ Id, Vgs2.7 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 5.01
10$ 3.39
100$ 2.92
Digi-Reel® 1$ 5.01
10$ 3.39
100$ 2.92
Tape & Reel (TR) 1000$ 2.92
NewarkEach (Supplied on Cut Tape) 1$ 5.42
10$ 3.62
25$ 3.61
50$ 3.27

Description

General part information

IPB027 Series

The IPB027N10N3 G is an OptiMOS™ N-channel Power MOSFET offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS (ON) and FOM.

Documents

Technical documentation and resources

No documents available