IPB027N10N5ATMA1
ActiveOPTIMOS™ 5 N-CHANNEL POWER MOSFET 100 V ; D2PAK TO-263 PACKAGE; 2.7 MOHM;
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IPB027N10N5ATMA1
ActiveOPTIMOS™ 5 N-CHANNEL POWER MOSFET 100 V ; D2PAK TO-263 PACKAGE; 2.7 MOHM;
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Technical Specifications
Parameters and characteristics for this part
| Specification | IPB027N10N5ATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 120 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 139 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 10300 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) [Max] | 250 W |
| Rds On (Max) @ Id, Vgs | 2.7 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.8 V |
IPB027 Series
| Part | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Vgs (Max) | Mounting Type | Power Dissipation (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 2.7 mOhm | 6 V 10 V | N-Channel | 20 V | Surface Mount | 300 W | 206 nC | 120 A | 100 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 14800 pF | -55 °C | 175 ░C | 3.5 V | MOSFET (Metal Oxide) |
Infineon Technologies | 2.7 mOhm | 6 V 10 V | N-Channel | 20 V | Surface Mount | 250 W | 139 nC | 120 A | 100 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 10300 pF | -55 °C | 175 ░C | 3.8 V | MOSFET (Metal Oxide) |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPB027 Series
OptiMOS™ 5 100Vpower MOSFET IPB027N10N5 from Infineon is especially designed for synchronous rectification intelecomblocks including Or-ing, hotswap and battery protection as well as forserver power supplyapplications. The device has a lower RDS(on)of 22% compared to similar devices , one of the biggest contributors to this industry leading FOM is the low on-state resistance providing the highest level of power density and efficiency.
Documents
Technical documentation and resources