IPB027 Series

Catalog

POWER MOSFET, N CHANNEL, 100 V, 120 A, 0.0023 OHM, TO-263 (D2PAK), SURFACE MOUNT

Part	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs (Max)	Mounting Type	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Technology
Infineon Technologies IPB027N10N3GATMA1	2.7 mOhm	6 V 10 V	N-Channel	20 V	Surface Mount	300 W	206 nC	120 A	100 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	14800 pF	-55 °C	175 ░C	3.5 V	MOSFET (Metal Oxide)
Infineon Technologies IPB027N10N5ATMA1	2.7 mOhm	6 V 10 V	N-Channel	20 V	Surface Mount	250 W	139 nC	120 A	100 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10300 pF	-55 °C	175 ░C	3.8 V	MOSFET (Metal Oxide)