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IPB025N08N3GATMA1 - TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPB025N08N3GATMA1

Active
Infineon Technologies

POWER MOSFET, N CHANNEL, 80 V, 120 A, 0.002 OHM, TO-263 (D2PAK), SURFACE MOUNT

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IPB025N08N3GATMA1 - TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPB025N08N3GATMA1

Active
Infineon Technologies

POWER MOSFET, N CHANNEL, 80 V, 120 A, 0.002 OHM, TO-263 (D2PAK), SURFACE MOUNT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIPB025N08N3GATMA1
Current - Continuous Drain (Id) @ 25°C120 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs206 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]14200 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]300 W
Rds On (Max) @ Id, Vgs2.5 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 6.32
10$ 4.25
100$ 3.08
500$ 2.59
Digi-Reel® 1$ 6.32
10$ 4.25
100$ 3.08
500$ 2.59
Tape & Reel (TR) 1000$ 2.59
NewarkEach 1$ 4.17
10$ 3.03
25$ 2.74
50$ 2.53
100$ 2.31
250$ 2.24
500$ 2.16

Description

General part information

IPB025 Series

The IPB025N08N3 G is a N-channel Power MOSFET with performance leading benchmark OptiMOS™ technology. It is the market leader in highly efficient solutions for power generation, power supply and power consumption applications.

Documents

Technical documentation and resources

No documents available