IPB025 Series

Catalog

MOSFET N-CH 100V 180A TO263-7

Part	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Vgs (Max)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	FET Type	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
Infineon Technologies IPB025N10N3GE8187ATMA1	206 nC	Surface Mount	PG-TO263-7	-55 °C	175 ░C	14800 pF	MOSFET (Metal Oxide)	20 V	3.5 V	6 V 10 V	D2PAK TO-263-7	N-Channel	100 V	2.5 mOhm	180 A	300 W
Infineon Technologies IPB025N10N3GATMA1	206 nC	Surface Mount	PG-TO263-7	-55 °C	175 ░C	14800 pF	MOSFET (Metal Oxide)	20 V	3.5 V	6 V 10 V	D2PAK TO-263-7	N-Channel	100 V	2.5 mOhm	180 A	300 W
Infineon Technologies IPB025N08N3GATMA1	206 nC	Surface Mount		-55 °C	175 ░C		MOSFET (Metal Oxide)	20 V	3.5 V	6 V 10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	80 V	2.5 mOhm	120 A	300 W	14200 pF