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IPB025N10N3GE8187ATMA1 - TO-263-7, D2Pak

IPB025N10N3GE8187ATMA1

NRND
Infineon Technologies

MOSFET N-CH 100V 180A TO263-7

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IPB025N10N3GE8187ATMA1 - TO-263-7, D2Pak

IPB025N10N3GE8187ATMA1

NRND
Infineon Technologies

MOSFET N-CH 100V 180A TO263-7

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPB025N10N3GE8187ATMA1
Current - Continuous Drain (Id) @ 25°C180 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs206 nC
Input Capacitance (Ciss) (Max) @ Vds14800 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-263-7, D2PAK
Power Dissipation (Max) [Max]300 W
Rds On (Max) @ Id, Vgs2.5 mOhm
Supplier Device PackagePG-TO263-7
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 1000$ 2.65

Description

General part information

IPB025 Series

N-Channel 100 V 180A (Tc) 300W (Tc) Surface Mount PG-TO263-7

Documents

Technical documentation and resources