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ZXMN3A01FTA - SOT-23-3

ZXMN3A01FTA

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Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

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ZXMN3A01FTA - SOT-23-3

ZXMN3A01FTA

Active
Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationZXMN3A01FTA
Current - Continuous Drain (Id) @ 25°C1.8 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]3.9 nC
Input Capacitance (Ciss) (Max) @ Vds190 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]625 mW
Rds On (Max) @ Id, Vgs120 mOhm
Supplier Device PackageSOT-23-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.56
10$ 0.41
100$ 0.29
500$ 0.22
1000$ 0.19
Digi-Reel® 1$ 0.56
10$ 0.41
100$ 0.29
500$ 0.22
1000$ 0.19
Tape & Reel (TR) 3000$ 0.15
6000$ 0.13
9000$ 0.13

Description

General part information

ZXMN3G32DN8 Series

This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.