ZXMN3A06DN8TA
ActiveDiodes Inc
TRANSISTOR MOSFET ARRAY DUAL N-CH 30V 6.2A 8-PIN SOIC T/R
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ZXMN3A06DN8TA
ActiveDiodes Inc
TRANSISTOR MOSFET ARRAY DUAL N-CH 30V 6.2A 8-PIN SOIC T/R
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | ZXMN3A06DN8TA |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 4.9 A |
| Drain to Source Voltage (Vdss) | 30 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 17.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 796 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Power - Max [Max] | 1.8 W |
| Rds On (Max) @ Id, Vgs | 35 mOhm |
| Supplier Device Package | 8-SO |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1 V |
ZXMN3G32DN8 Series
Dual N-Channel Enhancement Mode MOSFET
| Part | Configuration | Technology | Supplier Device Package | Power - Max [Max] | Mounting Type | Package / Case | Package / Case [y] | Package / Case [x] | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | FET Feature | Rds On (Max) @ Id, Vgs [Max] | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Qualification | Vgs (Max) | Power Dissipation (Max) | Grade | Vgs(th) (Max) @ Id [Max] | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case [custom] | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 2 N-Channel (Dual) | MOSFET (Metal Oxide) | 8-SO | 1.8 W | Surface Mount | 8-SOIC | 3.9 mm | 0.154 in | 30 V | -55 °C | 150 °C | 3 V | Logic Level Gate | 24 mOhm | 12.9 nC | 608 pF | 5.7 A | |||||||||||||
Diodes Inc | 2 N-Channel (Dual) | MOSFET (Metal Oxide) | 8-SO | Surface Mount | 8-SOIC | 3.9 mm | 0.154 in | 30 V | -55 °C | 150 °C | 1 V | Logic Level Gate | 36.8 nC | 6.5 A | 20 mOhm | 1890 pF | ||||||||||||||
Diodes Inc | MOSFET (Metal Oxide) | SOT-23-3 | Surface Mount | SC-59 SOT-23-3 TO-236-3 | 30 V | -55 °C | 150 °C | 448 pF | 3.9 A | 65 mOhm | AEC-Q101 | 20 V | 1.5 W | Automotive | 2.2 V | N-Channel | 4.5 V 10 V | |||||||||||||
Diodes Inc | 2 N-Channel (Dual) | MOSFET (Metal Oxide) | 8-SO | 1.8 W | Surface Mount | 8-SOIC | 3.9 mm | 0.154 in | 30 V | -55 °C | 150 °C | 1 V | Logic Level Gate | 17.5 nC | 796 pF | 4.9 A | 35 mOhm | |||||||||||||
Diodes Inc | MOSFET (Metal Oxide) | SOT-23-3 | Surface Mount | SC-59 SOT-23-3 TO-236-3 | 30 V | -55 °C | 150 °C | 3 V | 7.7 nC | 318 pF | 3.8 A | 47 mOhm | 20 V | N-Channel | 4.5 V 10 V | 950 mW | ||||||||||||||
Diodes Inc | MOSFET (Metal Oxide) | SOT-23-6 | Surface Mount | SOT-23-6 | 30 V | -55 °C | 150 °C | 1 V | 600 pF | 3.7 A | 50 mOhm | 20 V | 1.1 W | N-Channel | 4.5 V 10 V | 12.6 nC | ||||||||||||||
Diodes Inc | 2 N-Channel (Dual) | MOSFET (Metal Oxide) | 8-SO | 1.8 W | Surface Mount | 8-SOIC | 3.9 mm | 0.154 in | 30 V | -55 °C | 150 °C | 1 V | Logic Level Gate | 17.5 nC | 796 pF | 4.9 A | 35 mOhm | |||||||||||||
Diodes Inc | MOSFET (Metal Oxide) | 8-SO | Surface Mount | 8-SOIC | 3.9 mm | 0.154 in | 30 V | -55 °C | 150 °C | 700 mV | 2480 pF | 7.2 A | 25 mOhm | 12 V | N-Channel | 2.5 V 4.5 V | 2 W | |||||||||||||
Diodes Inc | MOSFET (Metal Oxide) | 8-MSOP | Surface Mount | 8-MSOP 8-TSSOP | 30 V | -55 °C | 150 °C | 1 V | 1400 pF | 5.3 A | 25 mOhm | 20 V | 1.1 W | N-Channel | 4.5 V 10 V | 26.8 nC | 0.118 in | 3 mm | ||||||||||||
Diodes Inc | MOSFET (Metal Oxide) | SOT-23-3 | Surface Mount | SC-59 SOT-23-3 TO-236-3 | 30 V | -55 °C | 150 °C | 1 V | 190 pF | 1.8 A | 120 mOhm | 20 V | N-Channel | 4.5 V 10 V | 625 mW | 3.9 nC |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.70 | |
| 10 | $ 1.08 | |||
| 100 | $ 0.72 | |||
| Tape & Reel (TR) | 500 | $ 0.57 | ||
| 1000 | $ 0.52 | |||
| 1500 | $ 0.50 | |||
| 2500 | $ 0.47 | |||
| 3500 | $ 0.45 | |||
| 5000 | $ 0.44 | |||
| 12500 | $ 0.43 | |||
Description
General part information
ZXMN3G32DN8 Series
This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
Documents
Technical documentation and resources