ZXMN3A06DN8TC

Obsolete

Diodes Inc

MOSFET 2N-CH 30V 4.9A 8SO

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

ZXMN3A06DN8TC

Obsolete

Diodes Inc

MOSFET 2N-CH 30V 4.9A 8SO

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	ZXMN3A06DN8TC

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	4.9 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	17.5 nC
Input Capacitance (Ciss) (Max) @ Vds	796 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	1.8 W
Rds On (Max) @ Id, Vgs	35 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

ZXMN3G32DN8 Series

Dual N-Channel Enhancement Mode MOSFET

Part	Configuration	Technology	Supplier Device Package	Power - Max [Max]	Mounting Type	Package / Case	Package / Case [y]	Package / Case [x]	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	FET Feature	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Qualification	Vgs (Max)	Power Dissipation (Max)	Grade	Vgs(th) (Max) @ Id [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case [custom]	Package / Case
Diodes Inc ZXMN3F31DN8TA	2 N-Channel (Dual)	MOSFET (Metal Oxide)	8-SO	1.8 W	Surface Mount	8-SOIC	3.9 mm	0.154 in	30 V	-55 °C	150 °C	3 V	Logic Level Gate	24 mOhm	12.9 nC	608 pF	5.7 A
Diodes Inc ZXMN3A04DN8TA	2 N-Channel (Dual)	MOSFET (Metal Oxide)	8-SO		Surface Mount	8-SOIC	3.9 mm	0.154 in	30 V	-55 °C	150 °C	1 V	Logic Level Gate		36.8 nC		6.5 A	20 mOhm	1890 pF
Diodes Inc ZXMN3A14FQTA		MOSFET (Metal Oxide)	SOT-23-3		Surface Mount	SC-59 SOT-23-3 TO-236-3			30 V	-55 °C	150 °C					448 pF	3.9 A	65 mOhm		AEC-Q101	20 V	1.5 W	Automotive	2.2 V	N-Channel	4.5 V 10 V
Diodes Inc ZXMN3A06DN8TC	2 N-Channel (Dual)	MOSFET (Metal Oxide)	8-SO	1.8 W	Surface Mount	8-SOIC	3.9 mm	0.154 in	30 V	-55 °C	150 °C	1 V	Logic Level Gate		17.5 nC	796 pF	4.9 A	35 mOhm
Diodes Inc ZXMN3F30FHTA		MOSFET (Metal Oxide)	SOT-23-3		Surface Mount	SC-59 SOT-23-3 TO-236-3			30 V	-55 °C	150 °C	3 V			7.7 nC	318 pF	3.8 A	47 mOhm			20 V				N-Channel	4.5 V 10 V	950 mW
Diodes Inc ZXMN3A03E6TA		MOSFET (Metal Oxide)	SOT-23-6		Surface Mount	SOT-23-6			30 V	-55 °C	150 °C	1 V				600 pF	3.7 A	50 mOhm			20 V	1.1 W			N-Channel	4.5 V 10 V		12.6 nC
Diodes Inc ZXMN3A06DN8TA	2 N-Channel (Dual)	MOSFET (Metal Oxide)	8-SO	1.8 W	Surface Mount	8-SOIC	3.9 mm	0.154 in	30 V	-55 °C	150 °C	1 V	Logic Level Gate		17.5 nC	796 pF	4.9 A	35 mOhm
Diodes Inc ZXMN3B04N8TA		MOSFET (Metal Oxide)	8-SO		Surface Mount	8-SOIC	3.9 mm	0.154 in	30 V	-55 °C	150 °C	700 mV				2480 pF	7.2 A	25 mOhm			12 V				N-Channel	2.5 V 4.5 V	2 W
Diodes Inc ZXMN3A02X8TC		MOSFET (Metal Oxide)	8-MSOP		Surface Mount	8-MSOP 8-TSSOP			30 V	-55 °C	150 °C	1 V				1400 pF	5.3 A	25 mOhm			20 V	1.1 W			N-Channel	4.5 V 10 V		26.8 nC	0.118 in	3 mm
Diodes Inc ZXMN3A01FTA		MOSFET (Metal Oxide)	SOT-23-3		Surface Mount	SC-59 SOT-23-3 TO-236-3			30 V	-55 °C	150 °C	1 V				190 pF	1.8 A	120 mOhm			20 V				N-Channel	4.5 V 10 V	625 mW	3.9 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

ZXMN3G32DN8 Series

This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

Documents

Technical documentation and resources