CSD87503Q3ET
Active30-V, N CHANNEL NEXFET™ POWER MOSFET, DUAL COMMON SOURCE SON 3 MM X 3 MM, 21.9 MOHM
CSD87503Q3ET
Active30-V, N CHANNEL NEXFET™ POWER MOSFET, DUAL COMMON SOURCE SON 3 MM X 3 MM, 21.9 MOHM
Description
General part information
CSD87503Q3E Series
The CSD87503Q3E is a 30-V, 13.5-mΩ, common source, dual N-channel device designed for USB Type-C/PD and battery protection. This SON 3.3 × 3.3 mm device has low drain-to-drain on-resistance that minimizes losses and offers low component count for space constrained applications.
The CSD87503Q3E is a 30-V, 13.5-mΩ, common source, dual N-channel device designed for USB Type-C/PD and battery protection. This SON 3.3 × 3.3 mm device has low drain-to-drain on-resistance that minimizes losses and offers low component count for space constrained applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | CSD87503Q3ET |
|---|---|
| Channel Count | 2 |
| Configuration | N-Channel |
| Configuration - Features | Dual |
| Current - Continuous Drain (Id) (Ta) | 10 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Max) | 17.4 nC, 17.4 nC |
| Input Capacitance (Ciss) (Max) | 1020 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerVDFN |
| Package Length | 3.3 mm |
| Package Name | 8-VSON |
| Package Width | 3.3 mm |
| Power - Max | 15.6 W |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 2.1 V |
Pricing
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