CSD87503Q3E Series
Manufacturer: Texas Instruments
Beta
⌘K
30-V, N CHANNEL NEXFET™ POWER MOSFET, DUAL COMMON SOURCE SON 3 MM X 3 MM, 21.9 MOHM
| Part | Current - Continuous Drain (Id) (Ta) | Gate Charge (Max) | Package / Case | Operating Temperature (Min) | Operating Temperature (Max) | Input Capacitance (Ciss) (Max) | Drain to Source Voltage (Vdss) | Vgs(th) (Max) | Technology | Power - Max | Mounting Type | Channel Count | Configuration - Features | Configuration | Package Name | Package Width | Package Length | Rds On (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments | 10 A | 17.4 nC 17.4 nC | 8-PowerVDFN | -55 °C | 150 °C | 1020 pF | 30 V | 2.1 V | MOSFET (Metal Oxide) | 15.6 W | Surface Mount | 2 | Dual | N-Channel | 8-VSON | 3.3 mm | 3.3 mm | |
Texas Instruments | 10 A | 17.4 nC 17.4 nC | 8-PowerVDFN | -55 °C | 150 °C | 1020 pF | 30 V | 2.1 V | MOSFET (Metal Oxide) | 15.6 W | Surface Mount | 2 | Dual | N-Channel | 8-VSON | 3.3 mm | 3.3 mm | 13.5 mOhm |