IRF7509TR

Obsolete

Infineon Technologies

MOSFET N/P-CH 30V 2.7A/2A MICRO8

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Obsolete

Infineon Technologies

MOSFET N/P-CH 30V 2.7A/2A MICRO8

Technical Specifications

Parameters and characteristics for this part

Specification	IRF7509TR

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	2.7 A, 2 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	12 nC
Input Capacitance (Ciss) (Max) @ Vds	210 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-MSOP, 8-TSSOP
Package / Case	3 mm
Package / Case [custom]	0.118 in
Power - Max [Max]	1.25 W
Rds On (Max) @ Id, Vgs	110 mOhm
Supplier Device Package	Micro8™
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Package / Case	Package / Case [custom]	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Configuration	Supplier Device Package	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Technology	Vgs(th) (Max) @ Id	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	FET Feature
Infineon Technologies IRF7509TRPBF	-55 °C	150 °C	1.25 W	8-MSOP 8-TSSOP	0.118 in	3 mm	12 nC	N and P-Channel	Micro8™	110 mOhm	2 A 2.7 A	30 V	MOSFET (Metal Oxide)	1 V	Surface Mount	210 pF	Logic Level Gate
Infineon Technologies IRF7509TR	-55 °C	150 °C	1.25 W	8-MSOP 8-TSSOP	0.118 in	3 mm	12 nC	N and P-Channel	Micro8™	110 mOhm	2 A 2.7 A	30 V	MOSFET (Metal Oxide)	1 V	Surface Mount	210 pF	Logic Level Gate

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$