IRF7509TRPBF
ActiveDUAL MOSFET, COMPLEMENTARY N AND P CHANNEL, 30 V, 30 V, 2.7 A, 2.7 A, 0.11 OHM
Deep-Dive with AI
Search across all available documentation for this part.
IRF7509TRPBF
ActiveDUAL MOSFET, COMPLEMENTARY N AND P CHANNEL, 30 V, 30 V, 2.7 A, 2.7 A, 0.11 OHM
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IRF7509TRPBF |
|---|---|
| Configuration | N and P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.7 A, 2 A |
| Drain to Source Voltage (Vdss) | 30 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 210 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-MSOP, 8-TSSOP |
| Package / Case | 3 mm |
| Package / Case [custom] | 0.118 in |
| Power - Max [Max] | 1.25 W |
| Rds On (Max) @ Id, Vgs | 110 mOhm |
| Supplier Device Package | Micro8™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.80 | |
| 10 | $ 0.69 | |||
| 100 | $ 0.48 | |||
| 500 | $ 0.40 | |||
| 1000 | $ 0.34 | |||
| 2000 | $ 0.30 | |||
| Digi-Reel® | 1 | $ 0.80 | ||
| 10 | $ 0.69 | |||
| 100 | $ 0.48 | |||
| 500 | $ 0.40 | |||
| 1000 | $ 0.34 | |||
| 2000 | $ 0.30 | |||
| Tape & Reel (TR) | 4000 | $ 0.30 | ||
| 8000 | $ 0.29 | |||
| 12000 | $ 0.27 | |||
| 28000 | $ 0.26 | |||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 0.93 | |
| 10 | $ 0.72 | |||
| 25 | $ 0.66 | |||
| 50 | $ 0.59 | |||
| 100 | $ 0.52 | |||
| 250 | $ 0.47 | |||
| 500 | $ 0.40 | |||
| 1000 | $ 0.37 | |||
Description
General part information
IRF7509 Series
The IRF7509TRPBF is a dual N/P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The low profile (<lt/>1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.
Documents
Technical documentation and resources