IRF7509 Series

Catalog

DUAL MOSFET, COMPLEMENTARY N AND P CHANNEL, 30 V, 30 V, 2.7 A, 2.7 A, 0.11 OHM

Part	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Package / Case	Package / Case [custom]	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Configuration	Supplier Device Package	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Technology	Vgs(th) (Max) @ Id	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	FET Feature
Infineon Technologies IRF7509TRPBF	-55 °C	150 °C	1.25 W	8-MSOP 8-TSSOP	0.118 in	3 mm	12 nC	N and P-Channel	Micro8™	110 mOhm	2 A 2.7 A	30 V	MOSFET (Metal Oxide)	1 V	Surface Mount	210 pF	Logic Level Gate
Infineon Technologies IRF7509TR	-55 °C	150 °C	1.25 W	8-MSOP 8-TSSOP	0.118 in	3 mm	12 nC	N and P-Channel	Micro8™	110 mOhm	2 A 2.7 A	30 V	MOSFET (Metal Oxide)	1 V	Surface Mount	210 pF	Logic Level Gate