CSD17381F4

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Texas Instruments

30-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE LGA 1 MM X 0.6 MM, 117 MOHM, GATE ESD PROTECTION

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CSD17381F4

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Texas Instruments

30-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE LGA 1 MM X 0.6 MM, 117 MOHM, GATE ESD PROTECTION

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Description Specifications Series Pricing CAD Documents

Description

General part information

CSD17381F4 Series

This 90 mΩ, 30 V N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

Technical Specifications

Parameters and characteristics for this part

Specification	CSD17381F4

Current - Continuous Drain (Id) (Ta)	3.1 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	N-Channel
Gate Charge (Max)	1.35 nC
Input Capacitance (Ciss) (Max)	195 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	3-XFDFN
Package Name	3-PICOSTAR
Power Dissipation (Max)	500 mW
Rds On (Max)	109 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	1.1 V

CSD17381F4 Series

Part	Power Dissipation (Max)	Current - Continuous Drain (Id) (Ta)	Technology	Rds On (Max)	Mounting Type	Package / Case	Vgs (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Package Name	Vgs(th) (Max)
Texas Instruments CSD17381F4T	500 mW	3.1 A	MOSFET (Metal Oxide)	109 mOhm	Surface Mount	3-XFDFN	12 V	30 V	195 pF	4.5 V	1.8 V	1.35 nC	-55 °C	150 °C	N-Channel	3-PICOSTAR	1.1 V
Texas Instruments CSD17381F4	500 mW	3.1 A	MOSFET (Metal Oxide)	109 mOhm	Surface Mount	3-XFDFN	12 V	30 V	195 pF	4.5 V	1.8 V	1.35 nC	-55 °C	150 °C	N-Channel	3-PICOSTAR	1.1 V