CSD17381F4 Series
Manufacturer: Texas Instruments
Beta
⌘K
30-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE LGA 1 MM X 0.6 MM, 117 MOHM, GATE ESD PROTECTION
| Part | Power Dissipation (Max) | Current - Continuous Drain (Id) (Ta) | Technology | Rds On (Max) | Mounting Type | Package / Case | Vgs (Max) | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Gate Charge (Max) | Operating Temperature (Min) | Operating Temperature (Max) | FET Type | Package Name | Vgs(th) (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Texas Instruments | 500 mW | 3.1 A | MOSFET (Metal Oxide) | 109 mOhm | Surface Mount | 3-XFDFN | 12 V | 30 V | 195 pF | 4.5 V | 1.8 V | 1.35 nC | -55 °C | 150 °C | N-Channel | 3-PICOSTAR | 1.1 V |
Texas Instruments | 500 mW | 3.1 A | MOSFET (Metal Oxide) | 109 mOhm | Surface Mount | 3-XFDFN | 12 V | 30 V | 195 pF | 4.5 V | 1.8 V | 1.35 nC | -55 °C | 150 °C | N-Channel | 3-PICOSTAR | 1.1 V |