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DMN53D0L-7 - SOT-23-3

DMN53D0L-7

Active
Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

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DMN53D0L-7 - SOT-23-3

DMN53D0L-7

Active
Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN53D0L-7
Current - Continuous Drain (Id) @ 25°C500 mA
Drain to Source Voltage (Vdss)50 V
Drive Voltage (Max Rds On, Min Rds On) [Max]2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs0.6 nC
Input Capacitance (Ciss) (Max) @ Vds46 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Rds On (Max) @ Id, Vgs1.6 Ohm
Supplier Device PackageSOT-23-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.36
10$ 0.25
100$ 0.12
500$ 0.10
1000$ 0.07
Digi-Reel® 1$ 0.36
10$ 0.25
100$ 0.12
500$ 0.10
1000$ 0.07
Tape & Reel (TR) 3000$ 0.06
6000$ 0.06
9000$ 0.05
30000$ 0.05
75000$ 0.04
150000$ 0.04

Description

General part information

DMN53D0LDW Series

This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.