DMN53D0LT-7
ActiveDiodes Inc
N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
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DMN53D0LT-7
ActiveDiodes Inc
N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN53D0LT-7 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 350 mA |
| Drain to Source Voltage (Vdss) | 50 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 2.5 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 0.6 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 46 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-523 |
| Power Dissipation (Max) [Max] | 300 mW |
| Rds On (Max) @ Id, Vgs | 1.6 Ohm |
| Supplier Device Package | SOT-523 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 1.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 1 | $ 0.38 | |
| 10 | $ 0.27 | |||
| 100 | $ 0.14 | |||
| 500 | $ 0.11 | |||
| 1000 | $ 0.08 | |||
| 3000 | $ 0.07 | |||
| 6000 | $ 0.07 | |||
| 12000 | $ 0.06 | |||
| 51000 | $ 0.05 | |||
Description
General part information
DMN53D0LDW Series
This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
Documents
Technical documentation and resources