Zenode.ai Logo
Beta
K
DMN53D0LDW-7 - Diodes Incorporated-BC847BS-13-F GP BJT Trans GP BJT NPN 45V 0.1A 200mW 6-Pin SOT-363 T/R

DMN53D0LDW-7

Active
Diodes Inc

DUAL MOSFET, N CHANNEL, 50 V, 50 V, 360 MA, 360 MA, 1.6 OHM

Deep-Dive with AI

Search across all available documentation for this part.

DMN53D0LDW-7 - Diodes Incorporated-BC847BS-13-F GP BJT Trans GP BJT NPN 45V 0.1A 200mW 6-Pin SOT-363 T/R

DMN53D0LDW-7

Active
Diodes Inc

DUAL MOSFET, N CHANNEL, 50 V, 50 V, 360 MA, 360 MA, 1.6 OHM

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN53D0LDW-7
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C360 mA
Drain to Source Voltage (Vdss)50 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs0.6 nC
Input Capacitance (Ciss) (Max) @ Vds46 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-TSSOP, SC-88, SOT-363
Power - Max [Max]310 mW
Rds On (Max) @ Id, Vgs1.6 Ohm
Supplier Device PackageSOT-363
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 3000$ 0.04
6000$ 0.03
DigikeyCut Tape (CT) 1$ 0.32
10$ 0.22
100$ 0.11
500$ 0.09
1000$ 0.07
Digi-Reel® 1$ 0.32
10$ 0.22
100$ 0.11
500$ 0.09
1000$ 0.07
Tape & Reel (TR) 3000$ 0.06
6000$ 0.05
9000$ 0.05
30000$ 0.05
75000$ 0.04
150000$ 0.04
NewarkEach (Supplied on Full Reel) 3000$ 0.07
6000$ 0.07
12000$ 0.06

Description

General part information

DMN53D0LDW Series

This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.