STH275N8F7-2AG

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STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 80 V, 1.7 MOHM TYP., 180 A STRIPFET F7 POWER MOSFET IN H2PAK-2 PACKAGE

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DocumentsProduct Change Notice EN +15

STH275N8F7-2AG

Active

STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 80 V, 1.7 MOHM TYP., 180 A STRIPFET F7 POWER MOSFET IN H2PAK-2 PACKAGE

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DocumentsProduct Change Notice EN +15

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STH275N8F7-2AG

Current - Continuous Drain (Id) @ 25°C	180 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	193 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	13600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	315 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	2.1 mOhm
Supplier Device Package	H2Pak-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

STH275N8F7-2AG Series

Automotive-grade N-channel 80 V, 1.7 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-2 package

Part	Drain to Source Voltage (Vdss)	Vgs (Max)	Supplier Device Package	Technology	Power Dissipation (Max) [Max]	Grade	Qualification	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	FET Type
STMicroelectronics STH275N8F7-2AG	80 V	20 V	H2Pak-2	MOSFET (Metal Oxide)	315 W	Automotive	AEC-Q101	10 V	Surface Mount	2.1 mOhm	180 A	4.5 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	13600 pF	193 nC	-55 °C	175 ░C	N-Channel
STMicroelectronics STH275N8F7-6AG	80 V	20 V	H2PAK-6	MOSFET (Metal Oxide)	315 W	Automotive	AEC-Q101	10 V	Surface Mount	2.1 mOhm	180 A	4.5 V	D2PAK TO-263-7	13600 pF	193 nC	-55 °C	175 ░C	N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 6.49
		10	$ 4.36
		100	$ 3.16
		500	$ 2.64
	Digi-Reel®	1	$ 6.49
		10	$ 4.36
		100	$ 3.16
		500	$ 2.64
	Tape & Reel (TR)	1000	$ 2.57
Newark	Each (Supplied on Cut Tape)	1	$ 7.36
		10	$ 5.74
		25	$ 5.34
		50	$ 4.95
		100	$ 4.56
		250	$ 4.30
		500	$ 4.05

Description

General part information

STH275N8F7-2AG Series

These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Documents

Technical documentation and resources

STH275N8F7-2AG

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STH275N8F7-2AG

Deep-Dive with AI

Technical Specifications

STH275N8F7-2AG Series

Pricing

Description

STH275N8F7-2AG Series

Documents

Product Change Notice EN

AN4191

AN4390

UM1575

AN4337

AN3267

TN1225

AN4789

TN1224

DS10740

Datasheet

STH275N8F7-2AG Series