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STH275N8F7-6AG - H2PAK-2

STH275N8F7-6AG

Active
STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 80 V, 1.7 MOHM TYP., 180 A STRIPFET F7 POWER MOSFET IN H2PAK-6 PACKAGE

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Search across all available documentation for this part.

DocumentsDatasheetTN1224+17
STH275N8F7-6AG - H2PAK-2

STH275N8F7-6AG

Active
STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 80 V, 1.7 MOHM TYP., 180 A STRIPFET F7 POWER MOSFET IN H2PAK-6 PACKAGE

Deep-Dive with AI

DocumentsDatasheetTN1224+17

Technical Specifications

Parameters and characteristics for this part

SpecificationSTH275N8F7-6AG
Current - Continuous Drain (Id) @ 25°C180 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]193 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds13600 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-263-7, D2PAK
Power Dissipation (Max) [Max]315 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs2.1 mOhm
Supplier Device PackageH2PAK-6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 6.41
10$ 5.38
100$ 4.35
500$ 3.87
Digi-Reel® 1$ 6.41
10$ 5.38
100$ 4.35
500$ 3.87
Tape & Reel (TR) 1000$ 3.31
2000$ 3.12
NewarkEach (Supplied on Cut Tape) 1$ 6.87
10$ 5.26
25$ 5.25
50$ 4.77
100$ 4.29
250$ 4.14
500$ 3.99
1000$ 3.98

Description

General part information

STH275N8F7-2AG Series

These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.