STH275N8F7-2AG Series

Automotive-grade N-channel 80 V, 1.7 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-2 package

Catalog

Automotive-grade N-channel 80 V, 1.7 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-2 package

Part	Drain to Source Voltage (Vdss)	Vgs (Max)	Supplier Device Package	Technology	Power Dissipation (Max) [Max]	Grade	Qualification	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	FET Type
STMicroelectronics STH275N8F7-2AG	80 V	20 V	H2Pak-2	MOSFET (Metal Oxide)	315 W	Automotive	AEC-Q101	10 V	Surface Mount	2.1 mOhm	180 A	4.5 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	13600 pF	193 nC	-55 °C	175 ░C	N-Channel
STMicroelectronics STH275N8F7-6AG	80 V	20 V	H2PAK-6	MOSFET (Metal Oxide)	315 W	Automotive	AEC-Q101	10 V	Surface Mount	2.1 mOhm	180 A	4.5 V	D2PAK TO-263-7	13600 pF	193 nC	-55 °C	175 ░C	N-Channel

Catalog

Automotive-grade N-channel 80 V, 1.7 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-2 package

Description

These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.