
IR2112PBF
NRNDEICEDRIVER™ 600 V HIGH-SIDE AND LOW-SIDE DRIVER IC WITH TYPICAL 0.25 A SOURCE AND 0.5 A SINK OUTPUT CURRENTS. IT COMES WITH A FUNCTIONAL LEVELSHIFT PDIP14 PACKAGE AND WORKS WITH IGBTS AND MOSFETS. FEATURES: ENABLE, SHUTDOWN
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IR2112PBF
NRNDEICEDRIVER™ 600 V HIGH-SIDE AND LOW-SIDE DRIVER IC WITH TYPICAL 0.25 A SOURCE AND 0.5 A SINK OUTPUT CURRENTS. IT COMES WITH A FUNCTIONAL LEVELSHIFT PDIP14 PACKAGE AND WORKS WITH IGBTS AND MOSFETS. FEATURES: ENABLE, SHUTDOWN
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Technical Specifications
Parameters and characteristics for this part
| Specification | IR2112PBF |
|---|---|
| Channel Type | Independent |
| Current - Peak Output (Source, Sink) [custom] | 500 mA |
| Current - Peak Output (Source, Sink) [custom] | 250 mA |
| Driven Configuration | High-Side, Low-Side |
| Gate Type | N-Channel MOSFET, IGBT |
| High Side Voltage - Max (Bootstrap) [Max] | 600 V |
| Input Type | Non-Inverting |
| Logic Voltage - VIL, VIH [Max] | 9.5 V |
| Logic Voltage - VIL, VIH [Min] | 6 V |
| Mounting Type | Through Hole |
| Number of Drivers | 2 |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 14-DIP |
| Package / Case [x] | 0.3 " |
| Package / Case [y] | 7.62 mm |
| Rise / Fall Time (Typ) [custom] | 80 ns |
| Rise / Fall Time (Typ) [custom] | 40 ns |
| Supplier Device Package | 14-DIP |
| Voltage - Supply [Max] | 20 V |
| Voltage - Supply [Min] | 10 VDC |
IR2112 Series
| Part | Driven Configuration | Package / Case [x] | Package / Case | Package / Case [y] | Gate Type | Operating Temperature [Max] | Operating Temperature [Min] | Mounting Type | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Logic Voltage - VIL, VIH [Max] | Logic Voltage - VIL, VIH [Min] | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Voltage - Supply [Max] | Voltage - Supply [Min] | Channel Type | Number of Drivers | High Side Voltage - Max (Bootstrap) [Max] | Input Type | Supplier Device Package | Package / Case [custom] | Package / Case [custom] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | High-Side Low-Side | 0.295 in | 16-SOIC | 7.5 mm | IGBT N-Channel MOSFET | 150 °C | -40 °C | Surface Mount | 80 ns | 40 ns | 9.5 V | 6 V | 500 mA | 250 mA | 20 V | 10 VDC | Independent | 2 | 600 V | Non-Inverting | 16-SOIC | ||
Infineon Technologies | High-Side Low-Side | 0.295 in | 16-SOIC | 7.5 mm | IGBT MOSFET N-Channel MOSFET | 150 °C | -40 °C | Surface Mount | 80 ns | 40 ns | 9.5 V | 6 V | 500 mA | 250 mA | 20 V | 10 VDC | Independent | 2 | 600 V | Non-Inverting | 16-SOIC | ||
Infineon Technologies | High-Side Low-Side | 0.295 in | 16-SOIC | 7.5 mm | IGBT N-Channel MOSFET | 150 °C | -40 °C | Surface Mount | 80 ns | 40 ns | 9.5 V | 6 V | 500 mA | 250 mA | 20 V | 10 VDC | Independent | 2 | 600 V | Non-Inverting | 16-SOIC | ||
Infineon Technologies | High-Side Low-Side | 0.3 " | 14-DIP | 7.62 mm | IGBT N-Channel MOSFET | 150 °C | -40 °C | Through Hole | 80 ns | 40 ns | 9.5 V | 6 V | 500 mA | 250 mA | 20 V | 10 VDC | Independent | 2 | 600 V | Non-Inverting | 14-DIP | ||
Infineon Technologies | High-Side Low-Side | 14 Leads 16-DIP | IGBT N-Channel MOSFET | 150 °C | -40 °C | Through Hole | 80 ns | 40 ns | 9.5 V | 6 V | 500 mA | 250 mA | 20 V | 10 VDC | Independent | 2 | 600 V | Non-Inverting | 16-PDIP | 0.3 in | 7.62 mm | ||
Infineon Technologies | High-Side Low-Side | 0.3 " | 14-DIP | 7.62 mm | IGBT N-Channel MOSFET | 150 °C | -40 °C | Through Hole | 80 ns | 40 ns | 9.5 V | 6 V | 500 mA | 250 mA | 20 V | 10 VDC | Independent | 2 | 600 V | Non-Inverting | 14-DIP | ||
Infineon Technologies | High-Side Low-Side | 0.295 in | 16-SOIC | 7.5 mm | IGBT N-Channel MOSFET | 150 °C | -40 °C | Surface Mount | 80 ns | 40 ns | 9.5 V | 6 V | 500 mA | 250 mA | 20 V | 10 VDC | Independent | 2 | 600 V | Non-Inverting | 16-SOIC | ||
Infineon Technologies | High-Side Low-Side | 14 Leads 16-DIP | IGBT N-Channel MOSFET | 150 °C | -40 °C | Through Hole | 80 ns | 40 ns | 9.5 V | 6 V | 500 mA | 250 mA | 20 V | 10 VDC | Independent | 2 | 600 V | Non-Inverting | 16-PDIP | 0.3 in | 7.62 mm |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IR2112 Series
600 V High and Low Side Driver IC with typical 0.25 A source and 0.5 A sink currents in 14 Lead PDIP package for IGBTs and MOSFETs. Also available in 16 Lead SOICWB.
Documents
Technical documentation and resources