IR2112 Series

Catalog

IC GATE DRVR HI/LOW SIDE 16SOIC

Part	Driven Configuration	Package / Case [x]	Package / Case	Package / Case [y]	Gate Type	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Logic Voltage - VIL, VIH [Max]	Logic Voltage - VIL, VIH [Min]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Voltage - Supply [Max]	Voltage - Supply [Min]	Channel Type	Number of Drivers	High Side Voltage - Max (Bootstrap) [Max]	Input Type	Supplier Device Package	Package / Case [custom]	Package / Case [custom]
Infineon Technologies IR2112STR	High-Side Low-Side	0.295 in	16-SOIC	7.5 mm	IGBT N-Channel MOSFET	150 °C	-40 °C	Surface Mount	80 ns	40 ns	9.5 V	6 V	500 mA	250 mA	20 V	10 VDC	Independent	2	600 V	Non-Inverting	16-SOIC
Infineon Technologies IR2112S	High-Side Low-Side	0.295 in	16-SOIC	7.5 mm	IGBT MOSFET N-Channel MOSFET	150 °C	-40 °C	Surface Mount	80 ns	40 ns	9.5 V	6 V	500 mA	250 mA	20 V	10 VDC	Independent	2	600 V	Non-Inverting	16-SOIC
Infineon Technologies IR2112SPBF	High-Side Low-Side	0.295 in	16-SOIC	7.5 mm	IGBT N-Channel MOSFET	150 °C	-40 °C	Surface Mount	80 ns	40 ns	9.5 V	6 V	500 mA	250 mA	20 V	10 VDC	Independent	2	600 V	Non-Inverting	16-SOIC
Infineon Technologies IR2112	High-Side Low-Side	0.3 "	14-DIP	7.62 mm	IGBT N-Channel MOSFET	150 °C	-40 °C	Through Hole	80 ns	40 ns	9.5 V	6 V	500 mA	250 mA	20 V	10 VDC	Independent	2	600 V	Non-Inverting	14-DIP
Infineon Technologies IR2112-2PBF	High-Side Low-Side		14 Leads 16-DIP		IGBT N-Channel MOSFET	150 °C	-40 °C	Through Hole	80 ns	40 ns	9.5 V	6 V	500 mA	250 mA	20 V	10 VDC	Independent	2	600 V	Non-Inverting	16-PDIP	0.3 in	7.62 mm
Infineon Technologies IR2112PBF	High-Side Low-Side	0.3 "	14-DIP	7.62 mm	IGBT N-Channel MOSFET	150 °C	-40 °C	Through Hole	80 ns	40 ns	9.5 V	6 V	500 mA	250 mA	20 V	10 VDC	Independent	2	600 V	Non-Inverting	14-DIP
Infineon Technologies IR2112STRPBF	High-Side Low-Side	0.295 in	16-SOIC	7.5 mm	IGBT N-Channel MOSFET	150 °C	-40 °C	Surface Mount	80 ns	40 ns	9.5 V	6 V	500 mA	250 mA	20 V	10 VDC	Independent	2	600 V	Non-Inverting	16-SOIC
Infineon Technologies IR2112-2	High-Side Low-Side		14 Leads 16-DIP		IGBT N-Channel MOSFET	150 °C	-40 °C	Through Hole	80 ns	40 ns	9.5 V	6 V	500 mA	250 mA	20 V	10 VDC	Independent	2	600 V	Non-Inverting	16-PDIP	0.3 in	7.62 mm