IR2112-2

Obsolete

Infineon Technologies

IC GATE DRVR HI/LOW SIDE 16DIP

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IR2112-2

Obsolete

Infineon Technologies

IC GATE DRVR HI/LOW SIDE 16DIP

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IR2112-2

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	500 mA
Current - Peak Output (Source, Sink) [custom]	250 mA
Driven Configuration	High-Side, Low-Side
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH [Max]	9.5 V
Logic Voltage - VIL, VIH [Min]	6 V
Mounting Type	Through Hole
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	16-DIP, 14 Leads
Package / Case [custom]	0.3 in
Package / Case [custom]	7.62 mm
Rise / Fall Time (Typ) [custom]	80 ns
Rise / Fall Time (Typ) [custom]	40 ns
Supplier Device Package	16-PDIP
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

IR2112 Series

Part	Driven Configuration	Package / Case [x]	Package / Case	Package / Case [y]	Gate Type	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Logic Voltage - VIL, VIH [Max]	Logic Voltage - VIL, VIH [Min]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Voltage - Supply [Max]	Voltage - Supply [Min]	Channel Type	Number of Drivers	High Side Voltage - Max (Bootstrap) [Max]	Input Type	Supplier Device Package	Package / Case [custom]	Package / Case [custom]
Infineon Technologies IR2112STR	High-Side Low-Side	0.295 in	16-SOIC	7.5 mm	IGBT N-Channel MOSFET	150 °C	-40 °C	Surface Mount	80 ns	40 ns	9.5 V	6 V	500 mA	250 mA	20 V	10 VDC	Independent	2	600 V	Non-Inverting	16-SOIC
Infineon Technologies IR2112S	High-Side Low-Side	0.295 in	16-SOIC	7.5 mm	IGBT MOSFET N-Channel MOSFET	150 °C	-40 °C	Surface Mount	80 ns	40 ns	9.5 V	6 V	500 mA	250 mA	20 V	10 VDC	Independent	2	600 V	Non-Inverting	16-SOIC
Infineon Technologies IR2112SPBF	High-Side Low-Side	0.295 in	16-SOIC	7.5 mm	IGBT N-Channel MOSFET	150 °C	-40 °C	Surface Mount	80 ns	40 ns	9.5 V	6 V	500 mA	250 mA	20 V	10 VDC	Independent	2	600 V	Non-Inverting	16-SOIC
Infineon Technologies IR2112	High-Side Low-Side	0.3 "	14-DIP	7.62 mm	IGBT N-Channel MOSFET	150 °C	-40 °C	Through Hole	80 ns	40 ns	9.5 V	6 V	500 mA	250 mA	20 V	10 VDC	Independent	2	600 V	Non-Inverting	14-DIP
Infineon Technologies IR2112-2PBF	High-Side Low-Side		14 Leads 16-DIP		IGBT N-Channel MOSFET	150 °C	-40 °C	Through Hole	80 ns	40 ns	9.5 V	6 V	500 mA	250 mA	20 V	10 VDC	Independent	2	600 V	Non-Inverting	16-PDIP	0.3 in	7.62 mm
Infineon Technologies IR2112PBF	High-Side Low-Side	0.3 "	14-DIP	7.62 mm	IGBT N-Channel MOSFET	150 °C	-40 °C	Through Hole	80 ns	40 ns	9.5 V	6 V	500 mA	250 mA	20 V	10 VDC	Independent	2	600 V	Non-Inverting	14-DIP
Infineon Technologies IR2112STRPBF	High-Side Low-Side	0.295 in	16-SOIC	7.5 mm	IGBT N-Channel MOSFET	150 °C	-40 °C	Surface Mount	80 ns	40 ns	9.5 V	6 V	500 mA	250 mA	20 V	10 VDC	Independent	2	600 V	Non-Inverting	16-SOIC
Infineon Technologies IR2112-2	High-Side Low-Side		14 Leads 16-DIP		IGBT N-Channel MOSFET	150 °C	-40 °C	Through Hole	80 ns	40 ns	9.5 V	6 V	500 mA	250 mA	20 V	10 VDC	Independent	2	600 V	Non-Inverting	16-PDIP	0.3 in	7.62 mm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IR2112 Series

High-Side or Low-Side Gate Driver IC Non-Inverting 16-PDIP

Documents

Technical documentation and resources