IRS2001PBF

Obsolete

Infineon Technologies

MOSFET DRIVER DUAL, LOW & HIGH SIDE, 10V-20V SUPPLY, 600MA PEAK OUT, DIP-8

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DocumentsTechnical Data Sheet EN

IRS2001PBF

Obsolete

Infineon Technologies

MOSFET DRIVER DUAL, LOW & HIGH SIDE, 10V-20V SUPPLY, 600MA PEAK OUT, DIP-8

Deep-Dive with AI

DocumentsTechnical Data Sheet EN

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRS2001PBF

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	290 mA
Current - Peak Output (Source, Sink) [custom]	600 mA
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	200 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	2.5 V, 0.8 V
Mounting Type	Through Hole
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	0.3 in
Package / Case	8-DIP
Package / Case	7.62 mm
Rise / Fall Time (Typ) [custom]	35 ns
Rise / Fall Time (Typ) [custom]	70 ns
Supplier Device Package	8-PDIP
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

IRS2001 Series

Part	Supplier Device Package	Voltage - Supply [Max]	Voltage - Supply [Min]	Input Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Package / Case	Package / Case	Package / Case	Gate Type	Driven Configuration	Channel Type	Operating Temperature [Min]	Operating Temperature [Max]	High Side Voltage - Max (Bootstrap) [Max]	Number of Drivers	Mounting Type	Logic Voltage - VIL, VIH	Package / Case [y]	Package / Case [x]
Infineon Technologies IRS2001PBF-INF	8-DIP	20 V	10 VDC	Non-Inverting	35 ns	70 ns	290 mA	600 mA	0.3 in	8-DIP	7.62 mm	IGBT N-Channel MOSFET	Half-Bridge	Independent	-40 °C	125 ¯C	200 V	2	Through Hole	0.8 V 2.5 V
Infineon Technologies IRS2001PBF	8-PDIP	20 V	10 VDC	Non-Inverting	35 ns	70 ns	290 mA	600 mA	0.3 in	8-DIP	7.62 mm	IGBT N-Channel MOSFET	Half-Bridge	Independent	-40 °C	150 °C	200 V	2	Through Hole	0.8 V 2.5 V
Infineon Technologies IRS2001STRPBF	8-SOIC	20 V	10 VDC	Non-Inverting	35 ns	70 ns	290 mA	600 mA		8-SOIC		IGBT N-Channel MOSFET	Half-Bridge	Independent	-40 °C	150 °C	200 V	2	Surface Mount	0.8 V 2.5 V	3.9 mm	0.154 in
Infineon Technologies IRS2001PBF	8-PDIP	20 V	10 VDC	Non-Inverting	35 ns	70 ns	290 mA	600 mA	0.3 in	8-DIP	7.62 mm	IGBT N-Channel MOSFET	Half-Bridge	Independent	-40 °C	150 °C	200 V	2	Through Hole	0.8 V 2.5 V
Infineon Technologies IRS2001SPBF	8-SOIC	20 V	10 VDC	Non-Inverting	35 ns	70 ns	290 mA	600 mA		8-SOIC		IGBT N-Channel MOSFET	Half-Bridge	Independent	-40 °C	150 °C	200 V	2	Surface Mount	0.8 V 2.5 V	3.9 mm	0.154 in

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	156	$ 1.93
		156	$ 1.93
Newark	Each	1	$ 2.20
		10	$ 2.01

Description

General part information

IRS2001 Series

IRS2001PBF is a high voltage, high speed power MOSFET and IGBT driver with independent high-side and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 200V.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet