IRS2001 Series

Catalog

BUFFER/INVERTER BASED PERIPHERAL

Part	Supplier Device Package	Voltage - Supply [Max]	Voltage - Supply [Min]	Input Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Package / Case	Package / Case	Package / Case	Gate Type	Driven Configuration	Channel Type	Operating Temperature [Min]	Operating Temperature [Max]	High Side Voltage - Max (Bootstrap) [Max]	Number of Drivers	Mounting Type	Logic Voltage - VIL, VIH	Package / Case [y]	Package / Case [x]
Infineon Technologies IRS2001PBF-INF	8-DIP	20 V	10 VDC	Non-Inverting	35 ns	70 ns	290 mA	600 mA	0.3 in	8-DIP	7.62 mm	IGBT N-Channel MOSFET	Half-Bridge	Independent	-40 °C	125 ¯C	200 V	2	Through Hole	0.8 V 2.5 V
Infineon Technologies IRS2001PBF	8-PDIP	20 V	10 VDC	Non-Inverting	35 ns	70 ns	290 mA	600 mA	0.3 in	8-DIP	7.62 mm	IGBT N-Channel MOSFET	Half-Bridge	Independent	-40 °C	150 °C	200 V	2	Through Hole	0.8 V 2.5 V
Infineon Technologies IRS2001STRPBF	8-SOIC	20 V	10 VDC	Non-Inverting	35 ns	70 ns	290 mA	600 mA		8-SOIC		IGBT N-Channel MOSFET	Half-Bridge	Independent	-40 °C	150 °C	200 V	2	Surface Mount	0.8 V 2.5 V	3.9 mm	0.154 in
Infineon Technologies IRS2001PBF	8-PDIP	20 V	10 VDC	Non-Inverting	35 ns	70 ns	290 mA	600 mA	0.3 in	8-DIP	7.62 mm	IGBT N-Channel MOSFET	Half-Bridge	Independent	-40 °C	150 °C	200 V	2	Through Hole	0.8 V 2.5 V
Infineon Technologies IRS2001SPBF	8-SOIC	20 V	10 VDC	Non-Inverting	35 ns	70 ns	290 mA	600 mA		8-SOIC		IGBT N-Channel MOSFET	Half-Bridge	Independent	-40 °C	150 °C	200 V	2	Surface Mount	0.8 V 2.5 V	3.9 mm	0.154 in