IRS2001PBF-INF

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Infineon Technologies

BUFFER/INVERTER BASED PERIPHERAL

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Infineon Technologies

BUFFER/INVERTER BASED PERIPHERAL

Technical Specifications

Parameters and characteristics for this part

Specification	IRS2001PBF-INF

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	290 mA
Current - Peak Output (Source, Sink) [custom]	600 mA
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	200 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	2.5 V, 0.8 V
Mounting Type	Through Hole
Number of Drivers	2
Operating Temperature [Max]	125 ¯C
Operating Temperature [Min]	-40 °C
Package / Case	0.3 in
Package / Case	8-DIP
Package / Case	7.62 mm
Rise / Fall Time (Typ) [custom]	35 ns
Rise / Fall Time (Typ) [custom]	70 ns
Supplier Device Package	8-DIP
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

Part	Supplier Device Package	Voltage - Supply [Max]	Voltage - Supply [Min]	Input Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Package / Case	Package / Case	Package / Case	Gate Type	Driven Configuration	Channel Type	Operating Temperature [Min]	Operating Temperature [Max]	High Side Voltage - Max (Bootstrap) [Max]	Number of Drivers	Mounting Type	Logic Voltage - VIL, VIH	Package / Case [y]	Package / Case [x]
Infineon Technologies IRS2001PBF-INF	8-DIP	20 V	10 VDC	Non-Inverting	35 ns	70 ns	290 mA	600 mA	0.3 in	8-DIP	7.62 mm	IGBT N-Channel MOSFET	Half-Bridge	Independent	-40 °C	125 ¯C	200 V	2	Through Hole	0.8 V 2.5 V
Infineon Technologies IRS2001PBF	8-PDIP	20 V	10 VDC	Non-Inverting	35 ns	70 ns	290 mA	600 mA	0.3 in	8-DIP	7.62 mm	IGBT N-Channel MOSFET	Half-Bridge	Independent	-40 °C	150 °C	200 V	2	Through Hole	0.8 V 2.5 V
Infineon Technologies IRS2001STRPBF	8-SOIC	20 V	10 VDC	Non-Inverting	35 ns	70 ns	290 mA	600 mA		8-SOIC		IGBT N-Channel MOSFET	Half-Bridge	Independent	-40 °C	150 °C	200 V	2	Surface Mount	0.8 V 2.5 V	3.9 mm	0.154 in
Infineon Technologies IRS2001PBF	8-PDIP	20 V	10 VDC	Non-Inverting	35 ns	70 ns	290 mA	600 mA	0.3 in	8-DIP	7.62 mm	IGBT N-Channel MOSFET	Half-Bridge	Independent	-40 °C	150 °C	200 V	2	Through Hole	0.8 V 2.5 V
Infineon Technologies IRS2001SPBF	8-SOIC	20 V	10 VDC	Non-Inverting	35 ns	70 ns	290 mA	600 mA		8-SOIC		IGBT N-Channel MOSFET	Half-Bridge	Independent	-40 °C	150 °C	200 V	2	Surface Mount	0.8 V 2.5 V	3.9 mm	0.154 in

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	156	$ 1.93

General part information

Half-Bridge Gate Driver IC Non-Inverting 8-DIP

Technical documentation and resources

No documents available