IQE006NE2LM5ATMA1
ActiveOPTIMOS™ 25V POWER MOSFET IN PQFN 3.3X3.3 SOURCE-DOWN PACKAGE WITH INDUSTRY LEADING RDS(ON).
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IQE006NE2LM5ATMA1
ActiveOPTIMOS™ 25V POWER MOSFET IN PQFN 3.3X3.3 SOURCE-DOWN PACKAGE WITH INDUSTRY LEADING RDS(ON).
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Technical Specifications
Parameters and characteristics for this part
| Specification | IQE006NE2LM5ATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 41 A, 298 A |
| Drain to Source Voltage (Vdss) | 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 82.1 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 5453 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 89 W, 2.1 W |
| Rds On (Max) @ Id, Vgs [Max] | 0.65 mOhm |
| Supplier Device Package | PG-TSON-8-4 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 16 V |
| Vgs(th) (Max) @ Id | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 3.00 | |
| 10 | $ 1.95 | |||
| 100 | $ 1.35 | |||
| 500 | $ 1.09 | |||
| 1000 | $ 1.01 | |||
| 2000 | $ 0.94 | |||
| Digi-Reel® | 1 | $ 3.00 | ||
| 10 | $ 1.95 | |||
| 100 | $ 1.35 | |||
| 500 | $ 1.09 | |||
| 1000 | $ 1.01 | |||
| 2000 | $ 0.94 | |||
| Tape & Reel (TR) | 5000 | $ 0.94 | ||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 2.35 | |
| 10 | $ 1.65 | |||
| 25 | $ 1.64 | |||
| 50 | $ 1.44 | |||
| 100 | $ 1.23 | |||
| 250 | $ 1.10 | |||
| 500 | $ 0.98 | |||
| 1000 | $ 0.84 | |||
Description
General part information
IQE006 Series
The innovative Source-Down OptiMOS™ low-voltage power MOSFET 25V (IQE006NE2LM5) comes in a PQFN3.3x3.3 package size, making it easy to use in the same PCB routing as the Drain-Down solution. In the same package outline of 3.3x3.3mm, the new Source-Down shows an industry benchmark RDS(on)by reducing the current standard RDS(on)of about 30 percent. In addition Source-Down shows a significant shrink of form factor. The same performance as a 5x6mm SuperSO8 is now achievable in a PQFN3.3x3.3 to use the PCB real estate more efficiently. Source-Down also offers a better transfer of power losses which means a superior thermal management. Overall the new and innovative Source-Down technology enables higher system efficiency and power density in the end application. This is especially necessary indrives,telecom,SMPSandserver.
Documents
Technical documentation and resources