IQE006NE2LM5CGATMA1

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Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 25 V ; PQFN 3.3X3.3 SOURCE-DOWN PACKAGE; 0.65 MOHM;

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DocumentsTechnical Data Sheet EN Datasheet

IQE006NE2LM5CGATMA1

Active

Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 25 V ; PQFN 3.3X3.3 SOURCE-DOWN PACKAGE; 0.65 MOHM;

Deep-Dive with AI

DocumentsTechnical Data Sheet EN Datasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IQE006NE2LM5CGATMA1

Current - Continuous Drain (Id) @ 25°C	41 A, 298 A
Drain to Source Voltage (Vdss)	25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	82.1 nC
Input Capacitance (Ciss) (Max) @ Vds	5453 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	89 W, 2.1 W
Rds On (Max) @ Id, Vgs [Max]	0.65 mOhm
Supplier Device Package	PG-TTFN-9-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	2 V

IQE006 Series

Part	Supplier Device Package	FET Type	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)
Infineon Technologies IQE006NE2LM5CGATMA1	PG-TTFN-9-1	N-Channel	2.1 W 89 W	-55 °C	150 °C	25 V	Surface Mount	0.65 mOhm	8-PowerTDFN	82.1 nC	16 V	MOSFET (Metal Oxide)	41 A 298 A	2 V	5453 pF
Infineon Technologies IQE006NE2LM5ATMA1	PG-TSON-8-4	N-Channel	2.1 W 89 W	-55 °C	150 °C	25 V	Surface Mount	0.65 mOhm	8-PowerTDFN	82.1 nC	16 V	MOSFET (Metal Oxide)	41 A 298 A	2 V	5453 pF	4.5 V 10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.00
		10	$ 1.95
		100	$ 1.35
		500	$ 1.09
		1000	$ 1.01
		2000	$ 0.95
	Tape & Reel (TR)	5000	$ 0.95
Newark	Each (Supplied on Cut Tape)	1	$ 2.75
		10	$ 1.78
		25	$ 1.59
		50	$ 1.41
		100	$ 1.23
		250	$ 1.10
		500	$ 0.98
		1000	$ 0.94

Description

General part information

IQE006 Series

With Infineon’s innovative Source-Down technology, the OptiMOS™ low-voltage power MOSFET (IQE006NE2LM5CG) is available as a Center-Gate footprint version. Placing the gate in the middle of the footprint leads to an optimized source connection. The Center-Gate footprint offers the advantage of optimized and easy parallelization of MOSFETs as the Center Gate comes with a larger drain to source creepage distance. With this it is possible to connect the gates of multiple devices on a single PCB layer, improving current capability, resulting in higher output levels. In addition, the Source-Down Center-Gate footprint offers high system efficiency and high power density.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet